Abstract:Hybrid bonding technology has recently emerged as a promising solution for advanced semiconductor packaging technologies. However, several reliability issues still pose challenges for commercialization. In this study, we investigated the possibility of crack formation caused by chemical mechanical polishing (CMP) defects and the misalignment of the hybrid bonding structure. Crack formation and thermomechanical stress were analyzed for two common hybrid bonding structures with misalignment using a numerical simulation. The effects of annealing temperature and dishing value on changes in the non-bonding area and peeling stress were systematically analyzed. The calculated peeling stresses were compared to the bonding strength of each bonding interface to find vulnerable regions prone to cracking. The non-bonding area in the bonding structure increased with a decreasing annealing temperature and an increasing dishing value. To achieve a sufficient bonding area of more than 90%, the annealing temperature should be greater than 200 °C. During the heating period of the annealing process, the SiCN-to-SiCN bonding interface was the most vulnerable cracking site with the highest peeling stress. An annealing temperature of 350 °C carries a significant risk of cracking. On the other hand, an annealing temperature lower than 250 °C will minimize the chance of cracking. The SiCN-to-SiO2 bonding interface, which has the lowest adhesion energy and a large coefficient of thermal expansion (CTE) mismatch, was expected to be another possible cracking site. During cooling, the SiCN-to-Cu bonding interface was the most vulnerable site with the highest stress. However, the simulated peeling stresses were lower than the adhesion strength of the bonded interface, indicating that the chance of cracking during the cooling process was very low. This study provides insights into minimizing the non-bonding area and preventing crack formation, thereby enhancing the reliability of hybrid bonding structures.

A Novel Nontraditional Approach to C2W Cu/SiO2 Hybrid Bonding

Low Temperature Cu/SiO2 Hybrid Bonding with Protruding Copper Pads

Bonding of Aluminum Coated Silicon Wafers Based on Polypropylene Carbonate and As a Multi-Functional Sensor

Low-temperature Cu/SiO 2 hybrid bonding based on Ar/H 2 plasma and citric acid cooperative activation for multi-functional chip integration

Development of low temperature Cu Cu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC)

Wafer-to-Wafer Hybrid Bonding Development by Advanced Finite Element Modeling for 3-D IC Packages

Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application

A Review of Mechanism and Technology of Hybrid Bonding

Thermal Finite Element Simulation of Ultrafine Pitch Chip-to-Wafer Hybrid Bonding

Low-Temperature Cu–Cu Direct Bonding Using Pillar–Concave Structure in Advanced 3-D Heterogeneous Integration

A Cu-Sn/BCB Hybrid Bonding with Embedded Bump Structure

Chip-to-wafer (C2W) 3D integration with well-controlled template alignment and wafer-level bonding

Enhanced Cu-to-Cu direct bonding by controlling surface physical properties

Development of Hybrid Bonding Process for Embedded Bump with Cu-Sn/BCB Structure

Modelling and characterization on wafer to wafer hybrid bonding technology for 3D IC packaging

In Situ Study on Cu-to-Cu Thermal Compression Bonding

Study on copper-to-copper bonding of three-dimensional integrated circuits using the quasicontinuum method

Assessment of the Risk of Crack Formation at a Hybrid Bonding Interface Using Numerical Analysis

Hybrid Bonding for Ultra-High-Density Interconnect

Cu-Cu joint formation by low-temperature sintering of self-reducible Cu nanoparticle paste under ambient condition

Low Temperature Fine-Pitch Wafer-Level Cu-Cu Bonding Using Nanoparticles Fabricated by PVD