Investigation of Silicon/Glass Anodic Bonding with Pecvd Silicon Carbide As the Intermediate Layer

W. Tang,B. Meng,W. Su,H. X. Zhang

DOI: https://doi.org/10.1088/0960-1317/22/9/095011

2012-01-01

Journal of Micromechanics and Microengineering

Abstract:This paper describes the study of the conventional silicon/glass anodic bonding with plasma enhanced chemical vapor deposited silicon carbide (PE-SiC) as the intermediate layer, in order to evaluate the feasibilities of applying PE-SiC as the device's passivation layer prior to the packaging bonding and construction layer based on the bond-and-transfer technique. It is found that the mechanism of this bonding is similar to the traditional anodic bonding. As the PE-SiC thickened, the bond strength declined; meanwhile, the leak rate remained at the same level with the silicon/glass bonding. Further experiments revealed that the bonding increased the interlayer's tensile stress by 70.7 MPa and diminished the stress gradient by 24.6 MPa mu m(-1).