Abstract:The silicon-on-glass (SOG) process which relies on anodic bonding between the glass substrate and silicon device layer is widely used in the fabrication of a variety of MEMS devices. Electrodes are usually formed by sputtering some metals on glass and located between the silicon and the glass, so its reliability depends on the quality of contact between the silicon and the metal. In this paper, the problems occurred in the interconnection surface of our designed devices are analyzed from the perspective of experiment and simulation. Firstly, the samples are encapsulated with resin, and after the sample is cured, it is processed by longitudinal grinding. Later the slice surfaces are observed by FIB. From this, it can be observed that between the metal and the anchor point there are 13.14nm and 75.36nm wide cracks respectively. Then we carried out finite element simulation on the model by combining solid mechanics and solid heat transfer coupling physical field. The simulation results show that the maximum volume stress can reach 2.88x10(7)Pa under 320 degrees C temperature difference of anodic bonding. We infer that the geometrical relationship between the metal and anchor points in the model is improper, due to the thermal stress of MPa generated during the bonding process, the silicon anchor point slips relative to the metal, and then cracks are generated. In this regard, we put forward the optimization and solution.

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