Silicon/glass wafer-to-wafer bonding with Ti/Ni intermediate bonding

Zhi-Xiong Xiao,Guo-Ying Wu,Dacheng Zhang,Guobing Zhang,Zhi-Hong Li,Yi-Long Hao,Yang-Yuan Wang
DOI: https://doi.org/10.1016/S0924-4247(98)00152-6
1998-01-01
Abstract:This paper presents silicon/glass wafer-to-wafer bonding with Ti/Ni intermediate at annealing temperature 440 degrees C. Good adhesion between the wafers has been achieved as measured by tensile strength testing. The reason is that silicon reacts with nickel and forms nickel silicide at 440 degrees C and Ti has good adhesion on SiO2 even at room temperature. The annealing at 440 degrees C enhances the adhesive quality of Ti on glass. The formed nickel silicide at the interface is NiSi from the analyses of X-ray diffractometer spectra and Anger electron spectrum surveys. Because the Ti/Ni film has a low resistivity, the bonding area can also be used as the electric interconnection. (C) 1998 Elsevier Science S.A. All rights reserved.
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