Research on Silicon-Glass Direct Bonding at Room Temperature

黄腾超,沈亦兵,侯西云,娄迪,白剑

DOI: https://doi.org/10.3321/j.issn:1005-0086.2004.05.002

2004-01-01

Abstract:During the process of silicon-glass direct bonding (SGDB) at room temperature, the hydrophilized glass and silicon wafer in solution are dried and initially bonded in atmosphere and below 150°C for 20 - 200 h. A pronounced increase of interface energy of ambient temperature bonded hydrophilic Si/glass wafers is observed. Then the bonded pairs are annealed at 200°C to induce stress due to the difference in the thermal expansion coefficient and thermal conduct coefficient. The formation of stronger siloxane bonds appears above 200°C. The relation between interface energy and storage time at room temperature and the relation between fracture strength and annealing time were measured. The experimental results indicate that SGDB at ambient temperature is an effective method of bonding silicon and glass.