Abstract:The influence of temperature in the range from 20 to 100 °C on the specific surface energy and fracture toughness of standard silicon wafers of three orientations (100), (110) and (111) was studied. Silicon wafers were heated on a special thermal platform with an autonomous heating controller, which was installed under the samples. At each temperature, the samples were kept for 10 min. The specific surface energy γ after exposure to temperature was determined by atomic force microscopy (AFM). Fracture toughness during and after exposure to temperature was determined by indentation followed by visualization of the deformation region using AFM. It has been established that the specific surface energy γ of Si wafers with orientation (100) and (111) increases with increasing temperature from 20 to 100 °C, and for orientation (110) it increases at temperatures from 20 to 80 °C, and then decreases. The diagonal length d of indentation marks, performed both during the heating process and after heating, decreases by increasing the temperature from 20 to 100 °C. The crack length c decreases on silicon wafers during indentation during heating from 20 to 100 °C, and after exposure to temperature, the length increases. When the plates are exposed to temperature, the fracture toughness K IC increases with increasing temperature: for orientation (100) – up to 1.61 ± 0.08 MPa·m 1/2 , for (110) – up to 1.60 ± 0.08 MPa·m 1/2 and for (111) – up to 1.66 ± 0.04 MPa·m 1/2 . A direct correlation was established between K IC , measured during exposure to temperature, and an inverse correlation between K IC measured after exposure to temperature and specific surface energy for the (100) and (111) orientations. An inverse correlation was obtained by K IC at the (110) orientation when exposed to temperatures of 20–40 and 80–100 °C, and after exposure, a direct correlation was obtained. At 60 °C there is no correlation. The results obtained can be used to improve the mechanical properties of silicon wafers used in solar cells and microelectromechanical systems (operating at temperatures up to 100 °C).

A Model for the Silicon Wafer Bonding Process

Research on Silicon-Glass Direct Bonding at Room Temperature

A Model of Low‐Temperature Wafer Bonding And Its Applications

Research on Silicon-Glass Thermal Bonding with SiO2 Film Assist

AN INTENSITY TESTING MODEL AND EXAMINATION OF GOLD–SILICON WAFER BONDING

Mechanisms for low-temperature direct bonding of Si/Si and quartz/quartz via VUV/O3 activation

Mechanisms for room temperature direct wafer bonding

Au-Si Eutectic Wafer Bonding Mechanism Analysis and a Intensity Model

Wafer bonding for microsystems technologies

The Study of the Bonding Energy on Silicon-to-Glass Wafer Bonding

Bonding Silicon Wafers with Reactive Multilayer Foils

Coefficient of Thermal Expansion Balancing for Field Assisted Bonding of Silicon to Glass

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Mechanical Stresses Estimation in Silicon and Glass Bonded at Elevated Temperature

Reliability of Au-Si Eutectic Bonding

Bonding mechanisms and electrical properties of Ge/Si and Si/Si bonded wafers achieved by thin microcrystalline Ge interlayer

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Simulation of the Void Shape Evolution of High-Temperature Annealed Silicon Structures by means of a Custom Level-Set Formulation

Low Temperature Silicon Wafer‐to‐Wafer Bonding with Nickel Silicide

Influence of Temperature from 20 to 100 °C on Specific Surface Energy and Fracture Toughness of Silicon Wafers