Abstract:The goal of this work is a scientifically justified choice of efficient technological parameters of anodic bonding of silicon to glass, ensuring a minimum level of residual stresses. The relevance of this dissertation is determined by the continuous efforts to reduce the negative effects of the joint use of dissimilar materials in electronic devices. Theoretical and practical results: the temperature dependence of the true values of the coefficient of thermal expansion of popular glass brands in the temperature range from minus 100 \deg C to 500 \deg C were obtained; the ratio of thicknesses of silicon and glass that minimizes residual stress on the silicon surface was calculated; the technique of minimizing the residual stresses in silicon anodically bonded to glass was developed. Results of this research are applicable to MEMS devices design and simulations. The first chapter provides the analysis of the current state of research in the field of anodic bonding technology application. The second chapter is devoted to the experimental study of temperature dependence of the linear thermal expansion coefficient of the glass. Thermomechanical properties and composition of the following glass brands: LK5, Schott Borofloat 33, Corning 7740, Hoya SD-2 were measured. The third chapter describes the existing models of estimating the residual stresses in the silicon-glass bonds. Two models based on a theory of strength of materials and the classical lamination theory with an additional temperature dependence of coefficients of thermal expansion are proposed for further use. Residual stresses in silicon-glass bonds are estimated with these models and data from the preceding chapter. The fourth chapter describes the experiments carried out to confirm claims from the previous chapters. The proposed technique of minimizing residual stresses is described as steps for a device designer.

Coefficient of Thermal Expansion Balancing for Field Assisted Bonding of Silicon to Glass

Coefficient of Thermal Expansion Mismatch Induced Stress Calculation for Field Assisted Bonding of Silicon to Glass

Mechanical Stresses Estimation in Silicon and Glass Bonded at Elevated Temperature

Research on Silicon-Glass Thermal Bonding with SiO2 Film Assist

Calculation and selection of silicon to glass anodic bonding modes based on the criterion of minimum residual stress

Linear thermal expansion coefficient (at temperatures from 130 to 800 K) of borosilicate glasses applicable for coupling with silicon in microelectronics

Research on Silicon-Glass Direct Bonding at Room Temperature

Investigation of the Reliability of the Interconnection between Metal Electrode and Silicon Anchor in Silicon-on-Glass Process

Interfacial Phenomena in Electric Field-Assisted Anodic Bonding of Kovar/Al Film-Glass

The Study of the Bonding Energy on Silicon-to-Glass Wafer Bonding

Residual stress in absolute pressure sensor using Si-Glass anodic bonding

Study on the mechanism of glass-SiC-glass anodic bonding process

A Model of Low‐Temperature Wafer Bonding And Its Applications

Evaluation and characterization of titanium to glass anodic bonding

Lattice constant and coefficient of linear thermal expansion of the silicon crystal. Influence of isotopic composition

A Model for the Silicon Wafer Bonding Process

Modeling of Anodic Bonding with SiO2 Dielectric As Interlayer

Evaluation method for MEMS silicon-glass anodic bonding process

Comparison of Measurements with Finite-Element Analysis of Silicon-Diaphragm-Based Fiber-Optic Fabry–Perot Temperature Sensors

AN INTENSITY TESTING MODEL AND EXAMINATION OF GOLD–SILICON WAFER BONDING

Measurement and Isolation of Thermal Stress in Silicon-On-Glass MEMS Structures