Abstract:The goal of this work is a scientifically justified choice of efficient technological parameters of anodic bonding of silicon to glass, ensuring a minimum level of residual stresses. The relevance of this dissertation is determined by the continuous efforts to reduce the negative effects of the joint use of dissimilar materials in electronic devices. Theoretical and practical results: the temperature dependence of the true values of the coefficient of thermal expansion of popular glass brands in the temperature range from minus 100 \deg C to 500 \deg C were obtained; the ratio of thicknesses of silicon and glass that minimizes residual stress on the silicon surface was calculated; the technique of minimizing the residual stresses in silicon anodically bonded to glass was developed. Results of this research are applicable to MEMS devices design and simulations. The first chapter provides the analysis of the current state of research in the field of anodic bonding technology application. The second chapter is devoted to the experimental study of temperature dependence of the linear thermal expansion coefficient of the glass. Thermomechanical properties and composition of the following glass brands: LK5, Schott Borofloat 33, Corning 7740, Hoya SD-2 were measured. The third chapter describes the existing models of estimating the residual stresses in the silicon-glass bonds. Two models based on a theory of strength of materials and the classical lamination theory with an additional temperature dependence of coefficients of thermal expansion are proposed for further use. Residual stresses in silicon-glass bonds are estimated with these models and data from the preceding chapter. The fourth chapter describes the experiments carried out to confirm claims from the previous chapters. The proposed technique of minimizing residual stresses is described as steps for a device designer.

Residual stress in absolute pressure sensor using Si-Glass anodic bonding

Characterization of anodic bonding induced diaphragm deflection in pressure sensor

Comparison of Measurements with Finite-Element Analysis of Silicon-Diaphragm-Based Fiber-Optic Fabry–Perot Temperature Sensors

Evaluation method for MEMS silicon-glass anodic bonding process

Study on the mechanism of glass-SiC-glass anodic bonding process

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Mechanical Stresses Estimation in Silicon and Glass Bonded at Elevated Temperature

Coefficient of Thermal Expansion Mismatch Induced Stress Calculation for Field Assisted Bonding of Silicon to Glass

High-Temperature Piezoresistive Pressure Sensitive Silicon Chip and Electrostatic Bonding Process

Effect of bonding adhesive thickness on temperature characteristics and strain characteristics of SAW strain sensors

Bottom-Up SAW Resonator Design for Single-Stage Glass Frit Bonding at Chip-Level

A New Silicon Diaphragm Pressure Sensor and Its Stress Analysis

Analysis Of Residual Stress In Electrical Penetration Assembly Based On A Fiber Bragg Grating Sensor

Optimized Sealing Process And Real-Time Monitoring Of Glass-To-Metal Seal Structures

In Situ Characterization of Residual Stress in Glass-to-metal Seal

Assessment of Residual Stress Evolution in Glass-to-metal Seals Amid Heating Process: Insights from in Situ Observations and Finite-Element Analysis

Calculation and selection of silicon to glass anodic bonding modes based on the criterion of minimum residual stress

Residual Stress Measurement of Sealing Glass Based on Optical Fiber Sensing Technology

Numerical Simulation of Residual Stress in the Glass-to-Metal Diffusion Seals

Investigation of Au/Si Eutectic Wafer Bonding for MEMS Accelerometers

Investigation of Potting-Adhesive-Induced Thermal Stress in MEMS Pressure Sensor