Abstract:The goal of this work is a scientifically justified choice of efficient technological parameters of anodic bonding of silicon to glass, ensuring a minimum level of residual stresses. The relevance of this dissertation is determined by the continuous efforts to reduce the negative effects of the joint use of dissimilar materials in electronic devices. Theoretical and practical results: the temperature dependence of the true values of the coefficient of thermal expansion of popular glass brands in the temperature range from minus 100 \deg C to 500 \deg C were obtained; the ratio of thicknesses of silicon and glass that minimizes residual stress on the silicon surface was calculated; the technique of minimizing the residual stresses in silicon anodically bonded to glass was developed. Results of this research are applicable to MEMS devices design and simulations. The first chapter provides the analysis of the current state of research in the field of anodic bonding technology application. The second chapter is devoted to the experimental study of temperature dependence of the linear thermal expansion coefficient of the glass. Thermomechanical properties and composition of the following glass brands: LK5, Schott Borofloat 33, Corning 7740, Hoya SD-2 were measured. The third chapter describes the existing models of estimating the residual stresses in the silicon-glass bonds. Two models based on a theory of strength of materials and the classical lamination theory with an additional temperature dependence of coefficients of thermal expansion are proposed for further use. Residual stresses in silicon-glass bonds are estimated with these models and data from the preceding chapter. The fourth chapter describes the experiments carried out to confirm claims from the previous chapters. The proposed technique of minimizing residual stresses is described as steps for a device designer.

Investigation of the Reliability of the Interconnection between Metal Electrode and Silicon Anchor in Silicon-on-Glass Process

Research on Silicon-Glass Thermal Bonding with SiO2 Film Assist

Study on the mechanism of glass-SiC-glass anodic bonding process

Silicon-Silicon Anodic Bonding Process With Embedded Glass

Mechanical Strength Measurement of Micro Anchor-Beam Combined Structure Fabricated by Silicon-on-glass Process

Investigation of the Contact Characteristics of Silicon–Gold in an Anodic Bonding Structure

Mechanical Stresses Estimation in Silicon and Glass Bonded at Elevated Temperature

Modeling of Anodic Bonding with SiO2 Dielectric As Interlayer

Evaluation method for MEMS silicon-glass anodic bonding process

Effect of Thin SiO2 Layer on Silicon-on-Glass Anodic Bonding

Coefficient of Thermal Expansion Mismatch Induced Stress Calculation for Field Assisted Bonding of Silicon to Glass

Optimization of Spin-on-glass Process for Multilevel Metal Interconnects

Reliability of Au-Si Eutectic Bonding

Investigation of Silicon/Glass Anodic Bonding with Pecvd Silicon Carbide As the Intermediate Layer

Device for the measurement of anchor torsional strength in MEMS devices

Calculation and selection of silicon to glass anodic bonding modes based on the criterion of minimum residual stress

A New Test Structure To Measure Bonding Strength In Micro-Bonding Area

Electrical interconnect in MEMS/NEMS devices by Au/a-Si eutectic reaction

Coefficient of Thermal Expansion Balancing for Field Assisted Bonding of Silicon to Glass

A novel method of anodic bonding

AN INTENSITY TESTING MODEL AND EXAMINATION OF GOLD–SILICON WAFER BONDING