Research on Silicon-Glass Thermal Bonding with SiO2 Film Assist

HUANG Teng-chao,SHEN Yi-bing,HOU Xi-yun,LOU Di,BAI Jian

DOI: https://doi.org/10.3785/j.issn.1008-973x.2005.09.008

2005-01-01

Abstract:To resolve the material thermal mismatch in silicon-glass direct bonding, a method of silicon-glass thermal bonding (SGTB) with SiO2 film assist was proposed. The physical-chemical procedure of SGTB technique with SiO2 film assist was analyzed and the bonding condition was optimized. The silicon wafers were highly polished by reactive ion beam etching (RIBE) until surface micro-roughness was under 2 nm, and the hydrophilic glass and oxidized silicon wafer were dried and initially bonded in air for appropriate hours. The bonded pairs were then annealed at 200℃ when stronger silanol bonds formed. Experimental results show that the interface energy of hydrophilic silicon-glass wafers bonded at ambient temperature increases greatly. The number of OH- groups produced by the reaction between water and the strained oxide on silicon surface increases, and polymerized silanol bonds appear. The presence of thermally grown SiO2 film reduces the induced stress due to the difference of the thermal expansion coefficient and the thermal conductivity coefficient in silicon and glass.