Abstract:Three-dimensional integration technology provides a promising total solution that can be used to achieve system-level integration with high function density and low cost. In this study, a wafer-level 3D integration technology using PDAP as an intermediate bonding polymer was applied effectively for integration with an SOI wafer and dummy a CMOS wafer. The influences of the procedure parameters on the adhesive bonding effects were determined by Si–Glass adhesive bonding tests. It was found that the bonding pressure, pre-curing conditions, spin coating conditions, and cleanliness have a significant influence on the bonding results. The optimal procedure parameters for PDAP adhesive bonding were obtained through analysis and comparison. The 3D integration tests were conducted according to these optimal parameters. In the tests, process optimization was focused on Si handle-layer etching, PDAP layer etching, and Au pillar electroplating. After that, the optimal process conditions for the 3D integration process were achieved. The 3D integration applications of the micro-bolometer array and the micro-bridge resistor array were presented. It was confirmed that 3D integration based on PDAP adhesive bonding is suitable for the fabrication of system-on-chip when using MEMS and IC integration and that it is especially useful for the fabrication of low-cost suspended-microstructure on-CMOS-chip systems.

Wafer Bonding with Intermediate Parylene Layer

Wafer bonding using microwave heating of parylene intermediate layers

Ppc-Based Bilayer Temporary Bonding and Debonding

Copper/parylene Core/shell Nanowire Surface Fastener Used for Room-Temperature Electrical Bonding.

Bonding of Aluminum Coated Silicon Wafers Based on Polypropylene Carbonate and As a Multi-Functional Sensor

Temporary Bonding Using Paper Inserted PPC Layer

Copolymerization of Parylene C and Parylene F to Enhance Adhesion and Thermal Stability Without Coating Performance Degradation.

A Low-Temperature Hybrid Bonding Using Copper and Parylene for Heterogeneous Integration

Ultra-thin Parylene-C Deposition on PDMS

Microfabrication And Characterization Of Parylene Af(4)

Temporary Bonding/Debonding of Silicon Substrates Based on Propylene Carbonate

Wafer-Level 3D Integration Based on Poly (Diallyl Phthalate) Adhesive Bonding

A low-temperature parylene-to-silicon dioxide bonding technique for high-pressure microfluidics

Microfabrication and Characterization of Parylene AF<inf>4</inf>

Investigation of Silicon/Glass Anodic Bonding with Pecvd Silicon Carbide As the Intermediate Layer

Room Temperature Electrical Bonding Technique Based on Titled Copper Nanowire Fastener with Anisotropic Adhesion Properties

Aluminum-coated silicon wafer bonding with tin intermediate layer

Wafer bonding for microsystems technologies

Bonding-friendly pcPDMS: Depositing Parylene C into PDMS matrix at an elevated temperature

An Annealing Process For Mechanical Strength Improvement Of Parylene Micropore-Arrayed Membrane

Room temperature wafer bonding through conversion of polysilazane into