Abstract:There has been considerable interest in low-temperature in-situ integration techniques for the fabrication of hetero-structured substrates and micro/nanosystems. This study presents a novel bonding approach that uses a water vapor-assisted surface activation strategy with neutral oxygen species (NOS). This method enables of highly efficient in-situ bonding process that utilizes the controllable and flexible environment to meet specific integration needs without exposure to the unstable ambient air. The NOS and water vapor increases hydroxyl groups, leading to smoother and more hydrophilic surfaces. The combined effects of NOS and the water vapor result in a larger bonded area ratio and significantly higher bonding energy compared to those activated by NOS alone. Meanwhile, the silicon oxide and quartz glass surfaces avoid being heavily electrically charged. This process thus achieved flawless silicon/quartz glass wafer bonding at 150 degrees C with a high bonding energy (similar to 4 J/m(2)) and Si/Si bonding pairs without any subsequent annealing voids. Then, the bonding pairs have been verified to have high reliability in extreme environments from -65 degrees C to 200 degrees C with no thermal-shocked cracks. The high-quality heterointerfaces could also withstand subsequent mechanical grinding and polishing for silicon-onquartz glass (SOQ) fabrication. Moreover, a SOQ structured microfluidic heat pipe device was successfully fabricated based on the low-temperature in-situ heterogenous bonding. The robust heterointerfaces ensured nonleakage working during the heat dissipation. This facile and cost-effective bonding method is suitable for damage-free heterogeneous integration of active devices, micro/nanofluidic chips, and M/NEMS packaging. It has of great potential in fields such as biochemical analysis, quantum computing, and thermal sensing.

Comparative study on GaAs/Si heterojunction fabricated by nitrogen and oxygen plasma activated bonding

Hybrid bonding of GaAs and Si wafers at low temperature by Ar plasma activation

Low Temperature Hydrophilic SiC Wafer Level Direct Bonding for Ultrahigh-Voltage Device Applications

Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding

Impact of an Annealing Atmosphere on Band-Alignment of a Plasma-Enhanced Atomic Layer Deposition-Grown Ga2O3/SiC Heterojunction

Low-temperature direct and indirect bonding using plasma activation for 3D integration

Fabrication of SiC-on-insulator Substrate Via a Low-Temperature Plasma Activated Bonding Process

Single-crystalline SiC Integrated Onto Si-based Substrates Via Plasma-Activated Direct Bonding

Two-Step Ar/N 2 Plasma Treatment on SiO 2 Surface for Cu/SiO 2 Hybrid Bonding

Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga 2 O 3 (001) substrates

Investigation of Plasma Activation Directions for Low-Damage Direct Bonding

Tuning the interlayer microstructure and residual stress of buffer-free direct bonding GaN/Si heterostructures

Single-crystalline LiNbO3 Integrated Onto Si-based Substrates Via Ar Plasma-Activated Low-Temperature Direct Bonding

Effect of Combined Hydrophilic Activation on Interface Characteristics of Si/Si Wafer Direct Bonding

Study of the Bonding Characteristics at Β-Ga2o3(201)/4h-sic(0001) Interfaces from First Principles and Experiment

Electrical and Structural Analysis of β‐Ga2O3/GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer

Surface State Passivation and Optical Properties Investigation of GaSb Via Nitrogen Plasma Treatment

Direct Bonding of LiNbO3 and GaAs at Room Temperature by Using Activated Si Atom Layer

Effects of Surface Activation Time on Si-Si Direct Wafer Bonding at Room Temperature

From Surface Activation to Microfluidic Heat Pipes: an Innovative In-Situ Wafer Level Heterogenous Bonding Method

Direct wafer bonding of Ga2O3–SiC at room temperature