Abstract:In the past decade, lithium niobate (LiNbO3 or LN) photonics, thanks to its heat-free and fast electro-optical modulation, second-order non-linearities and low loss, has been extensively investigated. Despite numerous demonstrations of high-performance LN photonics, processing lithium niobate remains challenging and suffers from incompatibilities with standard complementary metal-oxide semiconductor (CMOS) fabrication lines, limiting its scalability. Silicon carbide (SiC) is an emerging material platform with a high refractive index, a large non-linear Kerr coefficient, and a promising candidate for heterogeneous integration with LN photonics. Current approaches of SiC/LN integration require transfer-bonding techniques, which are time-consuming, expensive, and lack precision in layer thickness. Here we show that amorphous silicon carbide (a-SiC), deposited using inductively coupled plasma enhanced chemical vapor deposition (ICPCVD) at low temperatures (< 165 C), can be conveniently integrated with LiNbO3 and processed to form high-performance photonics. Most importantly, the fabrication only involves a standard, silicon-compatible, reactive ion etching step and leaves the LiNbO3 intact, hence its compatibility with standard foundry processes. As a proof-of-principle, we fabricated waveguides and ring resonators on the developed a-SiC/LN platform and achieved intrinsic quality factors higher than 106,000 and resonance electro-optic tunability of 3.4 pm/V with 3 mm tuning length. We showcase the possibility of dense integration by fabricating and testing ring resonators with 40um radius without a noticeable loss penalty. Our platform offers a CMOS-compatible and scalable approach for implementation of future fast electro-optic modulators and reconfigurable photonic circuits as well as nonlinear processes which can benefit from involving both second and third-order nonlinearities.

Single-crystalline LiNbO3 Integrated Onto Si-based Substrates Via Ar Plasma-Activated Low-Temperature Direct Bonding

Integration Technology for Wafer-Level LiNbO3 Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing

Direct Bonding of LiNbO3 and GaAs at Room Temperature by Using Activated Si Atom Layer

Irreversible Bonding of Polydimethylsiloxane‐Lithium Niobate using Oxygen Plasma Modification for Surface Acoustic Wave based Microfluidic Application: Theory and Experiment

Thinning of Lithium Niobate Wafers with a Novel Designed Lapping Tool and Measurements

Low Temperature Hydrophilic SiC Wafer Level Direct Bonding for Ultrahigh-Voltage Device Applications

Advanced Etching Techniques of LiNbO3 Nanodevices

Microstructure of LiNbO3 Thin Films Grown on Silicon Substrates by Pulsed Laser Deposition

An adjustable Ar ion-beam activation strategy to achieve hydrophilic bonding of Si and diamond by deposited AlN interlayer

Optical and Structural investigations of LiNbO3 thin films by PLD

Highly C-axis oriented LiNbO3 thin film on amorphous SiO2 buffer layer and its growth mechanism

Effect of Combined Hydrophilic Activation on Interface Characteristics of Si/Si Wafer Direct Bonding

Highly C-Axis Oriented LiNbO3 Thin Film Grown on SiO2/Si Substrates by Pulsed Laser Deposition

Heterogeneous integration of amorphous silicon carbide on thin film lithium niobate

LiNbO3 Thin Films through a Sol–Gel/Spin-Coating Approach Using a Novel Heterobimetallic Lithium–Niobium Precursor

Pulsed laser deposition of c-orientedLiNbO3LiTaO3 optical waveguiding bilayered films on silicon wafers

Pulsed Laser Deposition of Optical Waveguiding LiNbO 3 Films on SiO 2 Substrate

LiNbO3 Crystals: from Bulk to Film

Highly C-axis Oriented LiNbO; Thin Film on Amorphous SiO; Buffer Layer by PLD

The role of SiO2 buffer layer in the growth of highly textured LiNbO3 thin film upon SiO2/Si by pulsed laser deposition

State of the Art in Crystallization of LiNbO3 and Their Applications