Highly C-axis Oriented LiNbO; Thin Film on Amorphous SiO; Buffer Layer by PLD

he junhui,zhu jun,mao xiangyu,chen xiaobing,ye zhizhen

2005-01-01

Abstract:LiNbO; films with highly c-axis orientation and superior crystallographic quality have been deposited on the amorphous SiO; buffer layer of Si wafer by pulsed laser deposition （PLD） technique. X-ray diffraction, high-resolution electron transmission microscopy and atomic force microscopy were applied to characterize the quality and orientation of LiNbO; thin film, and the optimized deposition conditions have been determined for c-axis oriented growth. LiNbO; thin films on amorphous SiO; buffer layer were composed of intimate arrangements of quadrangular single crystal domain （150×150 nm） with c-axis orientation, and display sharp interface structures. In addition, the possible mechanism of oriented growth on amorphous buffer layer and "film-substrate effects" were discussed briefly, which suggests that it growth mechanism is likely analogous to the Volmer model with characteristics of three-dimensional islands nucleation on smooth crystal surface.