Highly C-axis Oriented LiNbO_3 Thin Film on Amorphous SiO_2 Buffer Layer by PLD

Zhizhen Ye

2005-01-01

Abstract:LiNbO_3 films with highly c-axis orientation and superior crystallographic quality have been deposited on the amorphous SiO_2 buffer layer of Si wafer by pulsed laser deposition (PLD) technique. X-ray diffraction, high-resolution electron transmission microscopy and atomic force microscopy were applied to characterize the quality and orientation of LiNbO_3 thin film, and the optimized deposition conditions have been determined for c-axis oriented growth. LiNbO_3 thin films on amorphous SiO_2 buffer layer were composed of intimate arrangements of quadrangular single crystal domain (150×150 nm) with c-axis orientation, and display sharp interface structures. In addition, the possible mechanism of oriented growth on amorphous buffer layer and film-substrate effects were discussed briefly, which suggests that it growth mechanism is likely analogous to the Volmer model with characteristics of three-dimensional islands nucleation on smooth crystal surface.