Abstract:Lithium niobate (LiNbO3) nanostructure thin film was prepared and deposited on the substrates made of quartz by utilizing pulse laser deposition (PLD) technique. The effect of substrate temperature changing on the optical and structural properties of LiNbO3 films was investigated and studied. The chemical mixture was prepared by mixing the raw material (Li2CO3, Nb2O5) with Ethanol liquid without any further purification, at the stirrer time 3hrs without heating, then the formed material was overexposed to annealing process at 1000°C for 4hrs. LiNbO3 nanostructure thin film was characterized and analyzed by utilizing the Ultra-Violet visible (UV-vis) and X-Ray Diffraction (XRD). The UV-vis results showed that the increase in the substrate temperature to 300°C leads to decrease in the values of transmission (T%), absorption (A) and optical energy gap (Eg) and increase in the values of reflection (R%) and refractive index (n). While, the XRD results explained that the LiNbO3 structure became more pure and crystalline with increase the substrate temperature, because the intensity of the phase 2θ at the value of 34.8°, 40.06° and 48.48° correspond to (110), (113) and (024) planes disappeared at the substrate temperature 300°C. So, all presented results give a good indication to use LiNbO3 nanostructure thin film prepared at the substrate temperature 300°C for manufacturing the optical waveguide to give the best results.

GROWTH AND CHARACTERIZATION OF C-ORIENTED LiNbO3 THIN FILMS ON Si (100) BY PLD

GROWTH AND CHARACTERIZATION OF C-ORIENTED <font>LiNbO</font><sub>3</sub> THIN FILMS ON Si (100) BY PLD

Growth and Characterization of c-Orient LiNbO3 Films on Si(100) by Pulse Laser Deposition

Pulsed laser deposition of c-orientedLiNbO3LiTaO3 optical waveguiding bilayered films on silicon wafers

Pulsed Laser Deposition of C-Oriented Optical Waveguiding Bilayered Films on Silicon Wafers

Highly C-axis oriented LiNbO3 thin film on amorphous SiO2 buffer layer and its growth mechanism

Optical Waveguide Properties of LiNbO3 Thin Films on Silicon Substrates

Growth and Optical Properties of Completely C-Axis Orientated LiNbO3 Films Deposited by Pulsed Laser Deposition

Highly C-Axis Oriented LiNbO3 Thin Film Grown on SiO2/Si Substrates by Pulsed Laser Deposition

Highly c-axis oriented LiNbO3 thin film directly grown on Si(111) substrate by pulsed laser deposition

Effect of growth rate on the characteristics of LiNbO3 waveguide thin films on SiO2/Si substrate by PLD

Highly C-axis Oriented LiNbO_3 Thin Film on Amorphous SiO_2 Buffer Layer by PLD

Growth of textured LiNbO3 thin film on Si (111) substrate by pulsed laser deposition

In-situ Poling of Lithium Niobate Films on Silicon Wafer by Applying a Low Electric Field During Pulsed Laser Deposition

Influence of substrate temperature on the growth and optical waveguide properties of oriented LiNbO3 thin films

Highly C-axis Oriented LiNbO; Thin Film on Amorphous SiO; Buffer Layer by PLD

Optical and Spectral Characteristics of Highlyc-Axis Oriented Nd : LiNbO3film on SiO2/Si Substrate by PLD

Nonlinear Optical LiNbO3 Films Grown on Α-Sio2 and Α-Al2o3 in Waveguiding Form

Optical and Structural investigations of LiNbO3 thin films by PLD

Effect of growth rate on the characteristics of LiNbO_3 waveguide thin films on SiO_2/Si substrate by PLD

The role of SiO2 buffer layer in the growth of highly textured LiNbO3 thin film upon SiO2/Si by pulsed laser deposition