Abstract:There has been considerable interest in low-temperature in-situ integration techniques for the fabrication of hetero-structured substrates and micro/nanosystems. This study presents a novel bonding approach that uses a water vapor-assisted surface activation strategy with neutral oxygen species (NOS). This method enables of highly efficient in-situ bonding process that utilizes the controllable and flexible environment to meet specific integration needs without exposure to the unstable ambient air. The NOS and water vapor increases hydroxyl groups, leading to smoother and more hydrophilic surfaces. The combined effects of NOS and the water vapor result in a larger bonded area ratio and significantly higher bonding energy compared to those activated by NOS alone. Meanwhile, the silicon oxide and quartz glass surfaces avoid being heavily electrically charged. This process thus achieved flawless silicon/quartz glass wafer bonding at 150 degrees C with a high bonding energy (similar to 4 J/m(2)) and Si/Si bonding pairs without any subsequent annealing voids. Then, the bonding pairs have been verified to have high reliability in extreme environments from -65 degrees C to 200 degrees C with no thermal-shocked cracks. The high-quality heterointerfaces could also withstand subsequent mechanical grinding and polishing for silicon-onquartz glass (SOQ) fabrication. Moreover, a SOQ structured microfluidic heat pipe device was successfully fabricated based on the low-temperature in-situ heterogenous bonding. The robust heterointerfaces ensured nonleakage working during the heat dissipation. This facile and cost-effective bonding method is suitable for damage-free heterogeneous integration of active devices, micro/nanofluidic chips, and M/NEMS packaging. It has of great potential in fields such as biochemical analysis, quantum computing, and thermal sensing.

Effect of NH4OH Treatment on Plasma‐Assisted InP/Al2O3/SOI Direct Wafer Bonding

Oxides Formation on Hydrophilic Bonding Interface in Plasma-Assisted Inp/Al2o3/Soi Direct Wafer Bonding

Study of InP/SOI Wafer Bonding Based on Wet Surface Activation Treatment

Effect of Combined Hydrophilic Activation on Interface Characteristics of Si/Si Wafer Direct Bonding

Low Temperature Direct InP/SOI Wafer Bonding Based on Hydrophilic/hydrophobic Treatment

Impact of in Situ NH3 Plasma Treatments on the Interface Between HfLaOx Thin Film and InP Substrate

Optical Investigations of Directly Wafer-Bonded InP–GaAs Heterojunctions

Effects of argon plasma pretreatment of Si wafers on Si-Si bonding based on Mo/Au interlayers

Impact of in-situ NH3 plasma treatments on the interface between HfLaOx thin film and InP substrate

Observations of Interfaces in Direct Wafer-Bonded InP–GaAs Structures

Effect of surface treatments on interfacial characteristics and band alignments of atomic-layer-deposited Al2O3 films on GaAs substrates

Microscale investigation on the wettability and bonding mechanism of oxygen plasma-treated PDMS microfluidic chip

Influence of NH3 Plasma Treatment on Chemical Bonding and Water Adsorption of Low-K SiCOH Film

Low-temperature direct and indirect bonding using plasma activation for 3D integration

The effects of oxygen plasma and humidity on surface roughness, water contact angle and hardness of silicon, silicon dioxide and glass

Investigation of Plasma Activation Directions for Low-Damage Direct Bonding

Effect of Al2O3 on the optical stability of InP induced by atom layer deposition

Characterization of Atomic-Layer-deposited Al2O3∕GaAs Interface Improved by NH3 Plasma Pretreatment

The Effect of Plasma Surface Activation Treatment on Capillary Flow Wettability of the Underfill Adhesive in the Standoff Gap of Si/Underfill/Si Bonded Structure in 3D ICs

Two-Step Ar/N 2 Plasma Treatment on SiO 2 Surface for Cu/SiO 2 Hybrid Bonding

From Surface Activation to Microfluidic Heat Pipes: an Innovative In-Situ Wafer Level Heterogenous Bonding Method