Thermoelectric Figure of Merit Of(in0.53ga0.47as)0.8

Je‐Hyeong Bahk,Zhixi Bian,Mona Zebarjadi,Joshua M. O. Zide,Hong Lü,Dongyan Xu,Joseph P. Feser,Gehong Zeng,Arun Majumdar,A. C. Gossard,Ali Shakouri,John E. Bowers

DOI: https://doi.org/10.1103/physrevb.81.235209

2010-01-01

Abstract:The thermoelectric figure of merit is measured and theoretically analyzed for $n$-type Si-doped InGaAlAs III-V quaternary alloys at high temperatures. The Seebeck coefficient, electrical conductivity, and thermal conductivity of a Si-doped ${({\text{In}}_{0.53}{\text{Ga}}_{0.47}\text{As})}_{0.8}{({\text{In}}_{0.52}{\text{Al}}_{0.48}\text{As})}_{0.2}$ of $2\text{ }\ensuremath{\mu}\text{m}$ thickness lattice matched to InP substrate grown by molecular-beam epitaxy are measured up to 800 K. The measurement results are analyzed using the Boltzmann transport theory based on the relaxation-time approximation and the theoretical calculation is extended to find optimal carrier densities that maximize the figure of merit at various temperatures. The figure of merit of 0.9 at 800 K is measured at a doping level of $1.9\ifmmode\times\else\texttimes\fi{}{10}^{18}\text{ }{\text{cm}}^{\ensuremath{-}3}$ and the theoretical prediction shows that the figure of merit can reach 1.3 at 1000 K at a doping level of $1.5\ifmmode\times\else\texttimes\fi{}{10}^{18}\text{ }{\text{cm}}^{\ensuremath{-}3}$.