Thermoelectric properties and microscopic characterization of Hf doped indium oxide thick film thermocouples screen printed on alumina substrates

Weifeng Wang,Helei Dong,Mengzhu Wang,Long Cheng,Chengwei Zhen,Qiulin Tan,Jijun Xiong

DOI: https://doi.org/10.1016/j.jeurceramsoc.2023.12.103

IF: 5.7

2024-02-09

Journal of the European Ceramic Society

Abstract:s The ITHfO slurry was prepared by doping HfO 2 into ITO, and In 2 O 3 -ITHfO thermocouples were fabricated using screen printing on Al 2 O 3 ceramic substrates. These thermocouples exhibit a temperature limit of 1600 °C. Post-annealing at 1250 °C resulted in more crystalline films with increased particle size. During this process, Sn 2+ in the films oxidised to Sn 4+ , and the valence of Hf increased. The high-temperature volatilisation of Sn led to a decrease in carrier concentration. However, Hf 4+ can substitute for In 3+ , thereby providing a free electron. This substitution mitigates the reduction in carrier concentration and enhances the upper-temperature measurement capability of the thermocouple. These experimental findings offer a novel approach to doping ITO, aimed at improving the electrical performance of ceramic thermocouples.

materials science, ceramics