Abstract:Ulta-wide bandgap semiconductors based on $\beta$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the commercialization of Ga$_2$O$_3$ electronics is overheating, which impacts the device's performance and reliability. We fabricated a Ga$_2$O$_3$/4H-SiC composite wafer using a fusion-bonding method. A low temperature ($\le$ 600 $^{\circ}$C) epitaxy and device processing approach based on low-temperature (LT) metalorganic vapor phase epitaxy is developed to grow a Ga$_2$O$_3$ epitaxial channel layer on the composite wafer and subsequently fabricate into Ga$_2$O$_3$ power MOSFETs. This LT approach is essential to preserve the structural integrity of the composite wafer. These LT-grown epitaxial Ga$_2$O$_3$ MOSFETs deliver high thermal performance (56% reduction in channel temperature), high voltage blocking capabilities up to 2.45 kV, and power figures of merit of $\sim$ 300 MW/cm$^2$, which is a record high for any heterogeneously integrated Ga$_2$O$_3$ devices reported to date. This work is the first realization of multi-kilovolt homoepitaxial Ga$_2$O$_3$ power MOSFETs fabricated on a composite substrate with high heat transfer performance which delivers state-of-the-art power density values while running much cooler than those on native substrates. Thermal characterization and modeling results reveal that a Ga$_2$O$_3$/diamond composite wafer with a reduced Ga$_2$O$_3$ thickness ($\sim$ 1 $\mu$m) and thinner bonding interlayer ($<$ 10 nm) can reduce the device thermal impedance to a level lower than today's GaN-on-SiC power switches.

First Demonstration of Robust Tri-Gate \b{eta}-Ga2O3 Nano-membrane Field-Effect Transistors Operated Up to 400 °C

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta2O5 as Gate Dielectric by Physical Vapor Deposition

Thermodynamic Studies of \b{eta}-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate

First Demonstration of Sequential Integration for Stacked Gate-All-Around a-IGZO Nanosheet Transistors with Record I<inf>d</inf> = 2.05 mA/µm, g<inf>m</inf> = 1.13 mS/µm and Ultralow SS = 66 mV/dec

Demonstration of the normally off -Ga<sub>2</sub>O<sub>3</sub> MOSFET with high threshold voltage and high current density

Al 2 O 3 -Dielectric InAlN/AlN/GaN ${\Gamma}$ -Gate MOS-HFETs With Composite Al 2 O 3 /TiO 2 Passivation Oxides

Quasi-two-dimensional β-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies

Demonstration of the normally off <b> <i>β</i> </b>-Ga2O3 MOSFET with high threshold voltage and high current density

Ultra-Wide Bandgap Ga$_2$O$_3$-on-SiC MOSFETs

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

Kilovolt-class β -Ga2O3 MOSFETs on 1-in. bulk substrates

300°C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

Demonstration of β-Ga2O3 Superjunction-Equivalent MOSFETs

Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown

Demonstration of aluminum nitride metal oxide semiconductor field effect transistor on sapphire substrate

702.3 A.cm(-2)/10.4 m Omega.cm(2) Vertical beta-Ga2O3 U-Shape Trench Gate MOSFET With N-Ion Implantation

Ga2O3 fin field-effect transistors with on-axis (100)-plane gate sidewalls fabricated on Ga2O3 (010) substrates

Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High- Metal Gates with Record High Performance