Abstract:Monolayer (ML) Ga2O3 with outstanding properties is promising for advanced nanodevice applications; however, its high exfoliation energy makes obtaining it challenging. In this study, we propose a more efficient solution to obtain ML Ga2O3 by exfoliation from indium-doped bulk & beta;-Ga2O3. The exfoliation efficiency with the assistance of In-doping and the doping influence on the stability and structural and electronic properties of ML Ga2O3 are systematically studied using first-principles calculations. The exfoliation energy of ML Ga2O3 is found to be reduced by 28% and is of the same order of magnitude as that of typical van der Waals (vdWs) 2D materials. Besides, excellent stability is preserved for ML Ga2O3 at extremely high In doping concentration by phonon spectrum and ab initio molecular dynamics inspections. The bandgap of ML Ga2O3 decreases from 4.88 to 4.25 eV with increased In concentration, and the modification of the VBM converts ML Ga2O3 to a direct bandgap semiconductor. With the suppression of ZA mode phonon scattering, the pristine and In-doped ML Ga2O3 exhibit high electron mobility, whereas the strong electron-phonon coupling (EPC) effect significantly decreases the hole mobility. Finally, the transfer characteristics of 5 nm MOSFETs based on the pristine and In-doped ML Ga2O3 with varied In concentrations are simulated based on the non-equilibrium Green's function (NEGF) formalism. The I-on for HP has a maximum of 3060 & mu;A & mu;m(-1) at In doping concentration of 5% and is triple that of the pristine ML Ga2O3 for LP at In doping concentration of 20%. The FOMs of n-type MOSFETs based on the In-doped ML Ga2O3 and typical 2D materials are compared and shows huge potential for sub-5 nm applications. Our study applies a new strategy for obtaining ML Ga2O3 and can also improve the device performance at the same time.

Ga2O3 fin field-effect transistors with on-axis (100)-plane gate sidewalls fabricated on Ga2O3 (010) substrates

High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application.

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Indium Doping-Assisted Monolayer Ga2O3 Exfoliation for Performance-Enhanced MOSFETs.

Enhancement-mode Ga2O3 FETs with an unintentionally doped (001) β-Ga2O3 channel layer grown by metal-organic chemical vapor deposition

Enhancement-mode Ga2O3 FETs with Unintentionally Doped (001) Β-Ga2o3 Channel Layer Grown by Metal-Organic Chemical Vapor Deposition

Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material

RF Performance Enhancement in Sub-Μm Scaled Β-Ga2o3 Tri-Gate FinFETs

First Demonstration of Robust Tri-Gate \b{eta}-Ga2O3 Nano-membrane Field-Effect Transistors Operated Up to 400 °C

β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching

Kilovolt-class β -Ga2O3 MOSFETs on 1-in. bulk substrates

Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs

Quasi-two-dimensional β-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies

Metal-oxide-semiconductor Field-Effect Transistors on GaAs (111)A Surface with Atomic-Layer-deposited Al2O3 As Gate Dielectrics

4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta2O5 as Gate Dielectric by Physical Vapor Deposition

Inaln/Gan Heterostructure Field-Effect Transistors on Fe-Doped Semi-Insulating Gan Substrates

702.3 A.cm(-2)/10.4 m Omega.cm(2) Vertical beta-Ga2O3 U-Shape Trench Gate MOSFET With N-Ion Implantation

Demonstration of the P-Niox/n-ga2o3 Heterojunction Gate FETs and Diodes with BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2

Enhancement-mode Β-Ga2o3 U-shaped Gate Trench Vertical MOSFET Realized by Oxygen Annealing

Trench Gate β-Ga2O3 MOSFETs: A Review

Improved Fabrication of Fully-Recessed Normally-off SiN/SiO2/GaN MISFET Based on the Self-Terminated Gate Recess Etching Technique