Abstract:The DC and RF assessment of critical barrier-AlGaN/GaN nano channel tri-gate fin-shaped High Electron Mobility Transistor (FinHEMT) is investigated for Enhancement-mode (E-mode) operation. We propose and analyze critical barrier layer (CBL) and critical-strained barrier layer (CSBL) FinHEMT for a fixed fin-shaped channel width (Wfin = 160 nm) and height (Hfin = 70 nm). The CBL FinHEMT ensures an E-mode operation by depleting two-dimensional electron gas (2DEG) near the channel region between AlGaN and GaN hetero-junction. The extracted threshold voltage (VT) in CBL FinHEMT is 0.4 V as compared to -0.2 V obtained in CSBL FinHEMT. However, increased gate leakage current density and poor gate voltage swing in CBL FinHEMT is improved through a metal-oxide-semiconductor FinHEMT (FinMOSHEMT) structure by the incorporation of Al2O3 gate oxide layer between the tri-gate and CBL AlGaN layer. It results in a stable positive VT of 0.5 V due to the negatively charged Al2O3/barrier interface fixed charge density (N_(〖Al〗_2 O_3 )). The proposed CBL FinMOSHEMT has also been studied for different atomic layer deposition Al2O3 process-dependent variations in N_(〖Al〗_2 O_3 ). The maximum on-state drain current and transconductance of 1.01 A/mm and 430 mS/mm have been extracted respectively with N_(〖Al〗_2 O_3 ) of -9.2×1012 cm-2. Further, the RF analysis of the proposed CBL FinMOSHEMT structure with the same dimension exhibits improved fT and fmax responses with 27 GHz and 90 GHz respectively over CBL FinHEMT. The results of the frequency responses obtained for the proposed design make it suitable for power electronics applications.

RF Performance Enhancement in Sub-Μm Scaled Β-Ga2o3 Tri-Gate FinFETs

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Heterointegrated Ga<sub>2</sub>O<sub>3</sub>-on-SiC RF MOSFETs With <i>f</i><sub>T</sub>/<i>f</i><sub>max</sub> of 47/51 GHz by Ion-Cutting Process

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

High-Voltage β-Ga 2 O 3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel

High-Voltage Β-Ga2o3 RF MOSFETs with a Shallowly-Implanted 2Deg-Like Channel

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DC and RF performance analysis of enhancement mode fin-shaped tri-gate AlGaN/GaN HEMT and MOSHEMT with ultra-thin barrier layer

Scaling of Ingaas Mosfets into Deep-Submicron

TCAD simulation of sub-10 nm high-k SOI GaN FinFET by implementing fin optimization approach for high-performance applications