Abstract:III-nitrides based high electron-mobility transistors (HEMTs) are well-known excellent candidates for high-power, radio-frequency (rf) and high-temperature applications. However, HEMTs have to face the essential issues of high gate leakage current and drain current collapse (gate-lag), which inevitably limits the device performances and reliability. Here, we fabricate an optimized AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT), by using HfZrOx (HZO) as a gate dielectric, that can improve the interfacial and transport properties. Compared to the conventional high permittivity (high-kappa) gate dielectric HfO2 which has attracted wide attention in recent years, the concentrations of interface traps and the inside fixed oxide defects are obviously reduced by using high quality HZO layer. Through the dielectric engineering of HZO, the MOS-HEMT with HZO dielectric shows an enhanced DC output performance with an increase of 54% at the optimal working condition, which is indeed much higher than that of the HfO2 MOS-HEMT (40%). And the HZO MOS-HEMT exhibits a higher I-on/I-off ratio of 10(6), an excellent subthreshold swing (SS) of 85 mV/decade, and a higher voltage swing (GVS). The gate leakage is reduced by nearly 8 orders of magnitude compared to the conventional unpassivated HEMTs (conv. HEMT) at the gate voltage of -5 V. These results are mainly caused by the replacement of the low-height Schottky barrier (SB) and the reduction of interface traps density. In order to further investigate the interfacial and electric properties of HZO MOS-HEMT, the dynamic gate/drain voltage and high-frequency capacitance-voltage (C-V) measurements are both applied. Remarkably, no measurable current collapse and C-V hysteresis are clearly observed, showing the enhanced interfacial and electric performances of the MOS-HEMT with dielectric engineering of HZO.

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Study of GaN/AlGaN Air Structure Gate HEMTs with High Linearity for RF Applications

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Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

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Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique

Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate

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Effect of Device Geometry on Static and Dynamic Performance of AlGaN/GaN-on-Si High Electron Mobility Transistor

High Performance InGaN Double Channel High Electron Mobility Transistors with Strong Coupling Effect Between the Channels

Analysis of RF performance of novel Sc-doped GaN high-electron-mobility transistors with air-bridge structure

Performance improvement of enhancement-mode GaN-based HEMT power devices by employing vertical gate structure and composite interlayers

Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

Enhanced Performances of AlGaN/GaN HEMTs with Dielectric Engineering of HfZrOx

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers

RF Linearity Enhancement of GaN-on-Si HEMTs With a Closely Coupled Double-Channel Structure

Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs