Abstract:Transition metal dichalcogenides (TMDs) receive significant attention due to their outstanding electronic and optical properties. In this study, we investigate the electronic, optical, and thermoelectric properties of single and few layer [Formula: see text] in detail utilizing first-principles methods based on the density functional theory (DFT). Within the scope of both PBE and HSE06 including spin orbit coupling (SOC), the simulations predict the electronic band gap values to decrease as the number of layers increases. Moreover, spin-polarized DFT calculations combined with the semi-classical Boltzmann transport theory are applied to estimate the anisotropic thermoelectric power factor (Seebeck coefficient, S) for [Formula: see text] in both the monolayer and multilayer limit, and S is obtained below the optimal value for practical applications. The optical absorbance of [Formula: see text] monolayer is obtained to be slightly less than the values reported in literature for 2H TMD monolayers of [Formula: see text], [Formula: see text], and [Formula: see text]. Furthermore, we simulate the impact of defects, such as vacancy, antisite and substitution defects, on the electronic, optical and thermoelectric properties of monolayer [Formula: see text]. Particularly, the Te-[Formula: see text] substitution defect in parallel orientation yields negative formation energy, indicating that the relevant defect may form spontaneously under relevant experimental conditions. We reveal that the electronic band structure of [Formula: see text] monolayer is significantly influenced by the presence of the considered defects. According to the calculated band gap values, a lowering of the conduction band minimum gives rise to metallic characteristics to the structure for the single Te(1) vacancy, a diagonal Te line defect, and the Te(1)-[Formula: see text] substitution, while the other investigated defects cause an opening of a small positive band gap at the Fermi level. Consequently, the real ([Formula: see text]) and imaginary ([Formula: see text]) parts of the dielectric constant at low frequencies are very sensitive to the applied defects, whereas we find that the absorbance (A) at optical frequencies is less significantly affected. We also predict that certain point defects can enhance the otherwise moderate value of S in pristine [Formula: see text] to values relevant for thermoelectric applications. The described [Formula: see text] monolayers, as functionalized with the considered defects, offer the possibility to be applied in optical, electronic, and thermoelectric devices.

Study on Electrical Defects Level in Single Layer Two-Dimensional Ta 2 O 5

Electrical Level of Defects in Single-Layer Two-Dimensional TiO2

Atomic Defects in Two‐Dimensional Materials: from Single‐Atom Spectroscopy to Functionalities in Opto‐/Electronics, Nanomagnetism, and Catalysis

Scanning Tunneling Microscopy Examinations of the Effects of Defects on the Charge Density Wave Order in the Chemical Vapor Deposition-Derived TaSe2 on Au Foils

Visualizing Atomic Quantum Defects in Ultrathin 1T-PtTe 2

Role of Defects in Tuning the Electronic Properties of Monolayer WS2 Grown by Chemical Vapor Deposition

Intrinsic Defects and Electronic Conductivity of Taon: First-Principles Insights

Defect emission and its dipole orientation in layered ternary Znln2S4 semiconductor

Engineering the electronic properties of MoTe2 via defect control

Electronic Structures of Oxygen-deficient Ta2O5

Probing Gate Dielectrics for Two-Dimensional Electronics at Atomistic Scale Using Transmission Electron Microscope

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Atomic Defect Quantification by Lateral Force Microscopy

Thickness and defect dependent electronic, optical and thermoelectric features of [Formula: see text]

Influence of Structural Defects on Charge Density Waves in 1T-TaS2

Electrical, optical and mechanical properties of monolayer MoTe 2 for applications in wearable optoelectronic devices

Engineering Two-Dimensional Electronics by Semiconductor Defects

The electronic structures of TiO2/Ti4O7, Ta2O5/TaO2 interfaces and the interfacial effects of dopants

Electrical levels of defect investigation of Zr O2 thin film by spectroscopic ellipsometry

Electronic Structure of Ta$_2$O$_5$ Polymorphs: Variation Trend of Band Gap and the Role of Oxygen Vacancies