Abstract:The structures and properties of intermetallic phases are intimately connected to electron count; unfavorable electron counts can result in structural rearrangements or new electrical or magnetic behavior when no such transformation is available. The compound PtGa2 appears to teeter on the border between these two scenarios with its two polymorphs: a cubic fluorite type form (c-PtGa2) and a complex tetragonal superstructure (t-PtGa2) whose Pt-Pt connectivity aligns with the 18- n electron counting rule. Here, we investigate the factors underlying this polymorphism. Electronic structure calculations show that the transition to t-PtGa2 opens a pseudogap at the Fermi energy that can be traced to Pt-Pt isolobal bond formation, in line with the 18- n bonding scheme. Conversely, DFT-chemical pressure (CP) analysis reveals a network of positive local pressures along Pt-Ga contacts, requiring that the c-PtGa2 to t-PtGa2 transition follows tightly concerted atomic motions. Experimentally, a series of samples with varying Pt:Ga ratios were synthesized to examine the stability ranges of the polymorphs. Ga-poor samples yield exclusively the cubic polymorph over the full range of temperatures studied, which can be correlated to the enhanced incorporation of interstitial Pt atoms (at points of negative pressure in the CP scheme). At more Ga-rich compositions, however, t-PtGa2 emerges as a low-temperature form. In these samples, the t-PtGa2 to c-PtGa2 transition is found to be reversible, but with a large hysteresis that in single crystals can exceed 100 °C. Together, the theoretical and experimental results indicate that the c-PtGa2 phase is buttressed at its unfavorable electron count by the interstitial atoms and networks of positive CPs that restrict atomic motion, suggesting more general strategies for achieving exotic electronic structures in intermetallic materials.

Ti- and Fe-related charge transition levels in β − Ga 2 O 3

Role of Native Defects in Fe-Doped β-Ga2O3

Diffusion of Co and Ga in α-Ti

Pt3Ga: Thermodynamics and Nonstoichiometry

Defect energy levels in monoclinic β-Ga2O3

Roles of Impurity Levels in 3d Transition Metal-Doped Two-Dimensional Ga2O3

Iron dopant energy levels in β -Ga2O3

Transition metal impurities as shallow donors in β−Ga2O3

Using ground state and excited state density functional theory to decipher 3 d dopant defects in GaN

Paths to Stabilizing Electronically Aberrant Compounds: A Defect-Stabilized Polymorph and Constrained Atomic Motion in PtGa2

Cobalt as a promising dopant for producing semi-insulating β-Ga2O3 crystals: Charge state transition levels from experiment and theory

Studies of the G Factors and Zero-Field Splitting for the Trigonal Ti2+GaSp Defect Center in GaP Crystal

Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals

Using ground state and excited state density functional theory to decipher 3d dopant defects in GaN

Characterization of defect levels in β-Ga 2 O 3 single crystals doped with tantalum

Observation of Temperature-Dependent Capture Cross-Section for Main Deep-Levels in $β$-Ga2O3

Al Coordination and Ga Interstitial Stability in a β-(Al0.2Ga0.8)2O3 Thin Film

Computational Study of Electron Paramagnetic Resonance Spectra for Li and Ga Vacancies in LiGaO2

Defect Formation in Gd3AlxGa5–xO12 (x = 1–3) and Gd3Al2Ga3O12:Ce Crystals

Electron paramagnetic resonance signatures of Co2+ and Cu2+ in b-Ga2O3

Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering