Abstract:Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is at least one order of magnitude lower than that of other wide bandgap semiconductors such as SiC and GaN. Thermal dissipation in electronics made from beta-Ga2O3 will be the bottleneck for real-world applications, especially for high power and high frequency devices. Similar to GaN/AlGaN interfaces, beta-(AlxGa1-x)2O3/Ga2O3 heterogeneous structures have been used to form a high mobility two-dimensional electron gas (2DEG) where joule heating is localized. The thermal properties of beta-(AlxGa1-x)2O3/Ga2O3 are the key for heat dissipation in these devices while they have not been studied before. This work reports the first measurement on thermal conductivity of beta-(Al0.1Ga0.9)2O3/Ga2O3 superlattices from 80 K to 480 K. Its thermal conductivity is significantly reduced (5.7 times reduction) at room temperature comparing with that of bulk Ga2O3. Additionally, the thermal conductivity of bulk Ga2O3 with (010) orientation is measured and found to be consistent with literature values regardless of Sn doping. We discuss the phonon scattering mechanism in these structures by calculating their inverse thermal diffusivity. By comparing the estimated thermal boundary conductance (TBC) of beta-(Al0.1Ga0.9)2O3/Ga2O3 interfaces and Ga2O3 maximum TBC, we reveal that some phonons in the superlattices transmit through several interfaces before scattering with other phonons or structural imperfections. This study is not only important for Ga2O3 electronics applications especially for high power and high frequency applications, but also for the fundamental thermal science of phonon transport across interfaces and in superlattices.

Observation of Temperature-Dependent Capture Cross-Section for Main Deep-Levels in $β$-Ga2O3

Donors and Deep Acceptors in $β$-Ga2O3

Dissimilar Thermal Transport Properties in Κ-Ga2o3 and Β-Ga2o3 Revealed by Homogeneous Nonequilibrium Molecular Dynamics Simulations Using Machine-Learned Potentials

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Observation of El2 and Additional Deep Levels at Low Temperature in an Algaas/Gaas Multiple-Quantum-Well Structure

Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals

Ti- and Fe-related charge transition levels in β − Ga 2 O 3

Defect identification based on first-principles calculations for deep level transient spectroscopy

Magnetospectroscopy of Be in Gaas

Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging

Significantly Reduced Thermal Conductivity in Beta-(Al0.1Ga0.9)2O3/Ga2O3 Superlattices

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Anisotropy of optical transitions in β - Ga2O3 investigated by polarized photoluminescence excitation spectroscopy

Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3

Deep Level Centers in Carbon-Doped High Resistivity GaN

Intra- and Inter-Conduction Band Optical Absorption Processes in $β$-Ga$_2$O$_3$

Trap States and Carrier Diffusion in Czochralski (100) Single Crystal β-Ga2O3

Deep Level Transient Spectroscopy Characterisation of Defects in AlGaN/Si Dual‐band (UV/IR) Detectors Grown by MBE

Quantification of the strong, phonon-induced Urbach tails in \b{eta}-Ga2O3 and their implications on electrical breakdown

Observation of the Transition from Diffusive Regime to Ballistic Regime of the 2DEG Transport Property in Al Ga1−N/GaN Heterostructures