Cobalt as a promising dopant for producing semi-insulating β-Ga2O3 crystals: Charge state transition levels from experiment and theory

Palvan Seyidov,Joel B. Varley,Zbigniew Galazka,Ta-Shun Chou,Andreas Popp,Andreas Fiedler,Klaus Irmscher
DOI: https://doi.org/10.1063/5.0112915
IF: 6.6351
2022-11-09
APL Materials
Abstract:Optical absorption and photoconductivity measurements of Co-doped β -Ga 2 O 3 crystals reveal the photon energies of optically excited charge transfer between the Co related deep levels and the conduction or valence band. The corresponding photoionization cross sections are fitted by a phenomenological model considering electron–phonon coupling. The obtained fitting parameters: thermal ionization (zero-phonon transition) energy, Franck–Condon shift, and effective phonon energy are compared with corresponding values predicted by first principle calculations based on density functional theory. A (+/0) donor level ∼0.85 eV above the valence band maximum and a (0/−) acceptor level ∼2.1 eV below the conduction band minimum are consistently derived. Temperature-dependent electrical resistivity measurement at elevated temperatures (up to 1000 K) yields a thermal activation energy of 2.1 ± 0.1 eV, consistent with the position of the Co acceptor level. Furthermore, the results show that Co doping is promising for producing semi-insulating β -Ga 2 O 3 crystals.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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