Impact of Heterovalent Cations (Ga, Co) Co-doping on the Physical Properties of ZnO Films for Optoelectronic Applications

Aradhana Tiwari,P. P. Sahay

DOI: https://doi.org/10.1007/s13538-022-01175-8

2022-08-15

Brazilian Journal of Physics

Abstract:In this paper, the incorporation of heterovalent cations (Ga, Co) in ZnO lattice and its impact on the physical properties of nanocrystalline ZnO films have been presented. The microstructural, optical, photoluminescence, and electrical properties of the films have been examined as a function of Ga, Co co-doping concentration. The X-ray diffraction analyses reveal that all the films are nanocrystalline, single phase, and have a hexagonal wurtzite structure of ZnO. The scanning electron micrographs establish that all the films have a dense, uniform polycrystalline microstructure without any pores or cracks. Upon doping and co-doping, the optical transmittance improves in the 1 at% Ga-doped ZnO film beyond the 430 nm wavelength and in (1 at% Ga + 1 at% Co) co-doped ZnO and (3 at% Ga + 1 at% Co) co-doped ZnO films beyond the 600 nm wavelength. The optical band gap values of the films lie in the range of 3.26–3.28 eV. The photoluminescence spectra comprising ultraviolet excitonic emission and defect-related visible emissions have been discussed. The room-temperature electrical resistivity has been found to be minimum in the (3 at% Ga + 1 at% Co) co-doped ZnO film.

physics, multidisciplinary