Effect of Lattice Defects on Crystal Structure and Microwave Properties of Ba(Ga1/2Ta1/2)O3 Doped Ba(Zn1/3Nb2/3)O3 Ceramics

Hao Li,Xiteng Li,Fei Liu,Xinnan Lin,Shaojun Liu

DOI: https://doi.org/10.1016/j.jallcom.2024.175175

IF: 6.2

2024-01-01

Journal of Alloys and Compounds

Abstract:Traditionally, B-site cation ordering structure in Ba(B ' B-1/3 ''(2/3))O-3 based ceramics with complex perovskite structure is considered to be the dominant factor in determining the dielectric loss. The crystal structure of BZN-BGT ceramics changes to the B-site disordering from B-site 1:2 ordering accompanying with remarkably reduced dielectric loss. Ba(Ga1/2Ta1/2)O-3 doping also inhibits the formation of Nb-rich secondary phases induced by Zn volatilization on the surface of BZN-BGT ceramics as well. The conductive activation energy E-a, an energy required for electrons to escape from the traps, increases to 0.55 eV from 0.40 eV, indicating the decrease of lattice defects concentration. As Ba(Ga1/2Ta1/2)O-3 doping concentration increases, the dielectric thermal relaxation process of BZN-BGT ceramics weakens and the electrical conductivity decreases. These results indicate that the dielectric loss of BZN-BGT ceramics containing volatile Zn could be controlled by the lattice defects and secondary phases rather than B-site 1:2 ordering structure.