Thin film transistor based on epitaxial Ta doped titanium dioxide film

Wei Zhao,Jin Ma,Xu Song,Qihai Li,Wei Zhang,Weiwei Chen
DOI: https://doi.org/10.1016/j.vacuum.2023.111816
IF: 4
2023-01-07
Vacuum
Abstract:Ta doped titanium dioxide (TiO 2 :Ta) films were deposited by a metalorganic chemical vapor deposition (MOCVD) system. X-ray diffraction (XRD) measurement revealed the TiO 2 :Ta films with low Ta contents (≤4.0 at.%) to be epitaxial films of anatase phase. X-ray photoelectron spectroscopy (XPS) measurement showed that Ta element only existed as Ta 5+ in TiO 2 lattice without other valence states. The electrical characteristics of the films could be modified through Ta doping. The minimum resistivity was obtained at Ta content of 2.0%. As Ta content increased, the carrier concentration increased from 4.9 × 10 17 to 1.3 × 10 19 cm −3 while the Hall mobility decreased from 20.4 to 3.07 cm 2 V −1 s −1 . The deposited TiO 2 :Ta films all presented high visible transparency over 93.0%. A thin-film transistor based on 1.0% Ta-doped TiO 2 film was fabricated, which exhibited high performances with a I ON / I OFF ratio of 7.5 × 10 7 , a subthreshold swing of 0.55 V/decade, and a saturation mobility of 3.4 cm 2 V −1 s −1 .
materials science, multidisciplinary,physics, applied
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