Electrical Properties of Transparent Doped Titania Films by Sol-Gel Method

Hong Lin,Takashi Uchino,Hiromitsu Kozuka,Toshinobu Yoko
1997-01-01
Abstract:) 4 solutions. The solution prepara- tion condition, solution composition, dopant content and heat-treatment temperature all severely af- fected the electrical resistivity of the resultant films. TiO 2 films co-doped with Ru and Ta (Nb) showed n-type conductivity, while those co-doped with Co and Nb (Sb) showed p-type conductivity. It seems that the obtained films can be utilized for assembling all-solid-state TiO 2 -based pn type solar cell. Solar energy is believed to be an essential energy source of the next century. A pn type solar cell with all- solid-state TiO 2 -based films seems to have many benefits for effective utilization of the solar energy because the ultra violet and visible light of solar light would be adsorbed by n-type TiO 2 and p-type TiO 2 , respectively. Here, transparent semiconductor electrodes with high conductivity are requested. We prepared TiO 2 films co- doped with Ru and Ta (Nb), and Co and Nb (Sb) by sol- gel method, aiming at making n- and p-type transparent semiconductive films, respectively. The effects of solu- tion composition, solution preparation condition, dopant content and heat-treatment temperature on the electrical resistivity of sol-gel derived films were studied. The conduction mechanisms of doped TiO 2 films were also discussed.
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