Potential impact of annealed cobalt-sulfide on current rectification of ITO/CoS2/Al Schottky device: Structural, optical, electrical, and magnetic characterizations

Pubali Das,Jitendra Saha,Satyendra Prakash Pal,Baishakhi Pal,Animesh Layek,Partha Pratim Ray

DOI: https://doi.org/10.1016/j.jpcs.2024.111922

IF: 4.383

2024-05-01

Journal of Physics and Chemistry of Solids

Abstract:This study explored the effects of annealing on the structural, optical, and semiconducting properties of hydrothermally derived CoS2 nanoparticles and its impact on carrier transport through a Schottky junction ITO/CoS2/Al device. The current rectification ratio obtained from current–voltage measurements for CoS2 (derived at room temperature) was 21.57 at a potential of ±1 V, but it was 70.61 for the Schottky junction fabricated by annealing (at 250 °C) with CoS2. The ideality factor (n), series resistance (Rs), barrier potential (φ b ), and other parameters were determined for the devices. The ideality factor improved significantly to 1.34 for the sample, produced at 250 °C. The charge transport phenomenon was examined based on thermionic emission theory and related parameters, such as the mobility (of the order of 10−4 m2V−1s−1), carrier concentration (of the order of 1020 m−3), density of state (of the order of 1021 eV−1m−3), and transit time (of the order of 10−9s), were estimated by employing space charge limited conduction (SCLC) theory. The occurrence of free carriers gave rise to ferromagnetic behavior, which was also studied. This is the first study to investigate the relationship between the magnetic spin and electronic behavior of CoS2 nanoparticles. The observed intrinsic ferromagnetism and magnetic behavior with respect to the temperature and magnetic field indicated the suitability of the material for spin-based electronic applications. Finally, the potential behavior of annealed (at 250 °C) CoS2 in the ITO/CoS2/Al Schottky device was observed.

physics, condensed matter,chemistry, multidisciplinary