Bandgap Shrinkage and Charge Transfer in 2D Layered SnS 2 Doped with V for Photocatalytic Efficiency Improvement
Abhijeet R. Shelke,Hsiao‐Tsu Wang,Jau‐Wern Chiou,Indrajit Shown,Amr Sabbah,Kuang‐Hung Chen,Shu‐Ang Teng,I‐An Lin,Chi‐Cheng Lee,Hung‐Chung Hsueh,Yu‐Hui Liang,Chao‐Hung Du,Priyanka L. Yadav,Sekhar C. Ray,Shang‐Hsien Hsieh,Chih‐Wen Pao,Huang‐Ming Tsai,Chia‐Hao Chen,Kuei‐Hsien Chen,Li‐Chyong Chen,Way‐Faung Pong
DOI: https://doi.org/10.1002/smll.202105076
IF: 13.3
2021-11-20
Small
Abstract:Effects of electronic and atomic structures of V-doped 2D layered SnS<sub>2</sub> are studied using X-ray spectroscopy for the development of photocatalytic/photovoltaic applications. Extended X-ray absorption fine structure measurements at V K-edge reveal the presence of VO and VS bonds which form the intercalation of tetrahedral OVS sites in the van der Waals (vdW) gap of SnS<sub>2</sub> layers. X-ray absorption near-edge structure (XANES) reveals not only valence state of V dopant in SnS<sub>2</sub> is ≈4<sup>+</sup> but also the charge transfer (CT) from V to ligands, supported by V L<sub>α,β</sub> resonant inelastic X-ray scattering. These results suggest V doping produces extra interlayer covalent interactions and additional conducting channels, which increase the electronic conductivity and CT. This gives rapid transport of photo-excited electrons and effective carrier separation in layered SnS<sub>2</sub> . Additionally, valence-band photoemission spectra and S K-edge XANES indicate that the density of states near/at valence-band maximum is shifted to lower binding energy in V-doped SnS<sub>2</sub> compare to pristine SnS<sub>2</sub> and exhibits band gap shrinkage. These findings support first-principles density functional theory calculations of the interstitially tetrahedral OVS site intercalated in the vdW gap, highlighting the CT from V to ligands in V-doped SnS<sub>2</sub> .
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology