Abstract:Publication date: 31 July 2023 Source: Key Engineering Materials Vol. 950 Author(s): Nian Nian Ge, Cai Ping Wan, Zhi Jin, Heng Yu Xu Investigation of the reaction kinetics between Ni film and 4H-SiC substrate at temperatures which are usually used for ohmic contacts formation provides valuable insights into the studies on fundamental properties of ohmic contacts to 4H-SiC, which are limiting the switching speed, energy efficiency and high-temperature thermal stability of SiC MOSFETs. High Resolution Scanning Electron Microscope (HRSEM) and Raman spectroscopy were used to elaborately characterize the interfacial reaction products under various annealing conditions and to assess the thicknesses of reaction diffusion layers. The square of reaction layer thicknesses versus time followed parabolic law and the apparent active energy of interfacial reaction was derived as 1.5 eV (145 kJ/mol). For Raman spectra, the intensity ratio of two Raman peaks for each nickel silicide detected varied monotonically with temperature in the same trend, indicating that crystal quality of nickel silicide film was improved with annealing temperature rising at micron scale. The red-shift of Ni2Si peak locations at about 140 cm-1 with temperature was suggestive of the polycrystalline Ni2Si film with weaker stress/strain status. Moreover, the in-plane size of graphite cluster aggregating at top surface increased with annealing temperature rising until about 1000°C, which is detrimental to the ohmic contacts from the perspective of device applications.

Thermal Stability of Mo C Alloy Schottky Contacts on N-Type 4H-Sic

Improved Interface Characteristics of Mo/4H-SiC Schottky Contact

Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures

Ohmic Contact Characteristics of Silicon Carbide-based MEMS Devices

The Thermal Stability Study and Improvement of 4H-Sic Ohmic Contact

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Investigation of Ni/Al/Ti Ohmic Contact on N-Type 4H-Sic

Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

Effects of Annealing Temperature on the Characteristics of Au/Ti/4H-SiC Schottky Contact

Formation Mechanism, Interface Characteristics and the Application of Metal/sic Thin-Film Ohmic Contact after High-Temperature Treatment

Ohmic Contacts on P-Type Sic Using Al/C Films

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

Low Temperature Cu/Ti/Al Ohmic Contacts to P-Type 4H-Sic

Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods

4H-SiC Ohmic contacts formation by MoS2 layer intercalation: A first-principles study

A Method to Improve the Specific Contact Resistance of 4H-Sic Ohmic Contact Through Increasing the Ratio of Sp2-Carbon

Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC

Effects of the Annealing Temperature on Ni Silicide/n-Si(100) Schottky Contacts

Annealing Temperature Dependent Properties for Ni/Ti/W Ohmic Contacts Simultaneously Formed on N- and P-Type 4H-Sic

Degradation in Electrothermal Characteristics and Failure Mechanism of SiC JBS with Different Die Attach Materials under 300°C Power Cycle Stress

Current Transport under High Magnetic Fields in Ni/4h-Sic Schottky Barrier