Abstract:Publication date: 22 August 2024 Source: Solid State Phenomena Vol. 359 Author(s): Mathieu Opprecht, Sébastien Kerdilès, Jérôme Biscarrat, Philippe Godignon, Cédric Masante, Romain Laviéville, Nicolas Vaxelaire, Patrice Gergaud, Adeline Grenier, Carl Jung, Fabien Roze, Zeinab Chehadi, Louis Thuries, Lu Lu, Toshiyuki Tabata Nowadays, the growing worldwide electrification requires new materials for power management. SiC currently dominates the market thanks to excellent energy efficiency and broad operating capabilities. The present paper proposes an experimental study of the Ni-SiC backside ohmic contact formation using 308 nm nanosecond laser annealing (NLA). After Nickel (80 nm) sputtering over 4H-SiC wafers, various laser conditions are investigated, with energy density (ED) ranging from 2.4 to 5.4 J/cm2, pulse number from 1 to 20 and chuck temperature from 25 °C (RT) to 400 °C. For all series, a common scenario is noticed as the ED increases, with first solid-state reactions, then local melt and, finally, complete top layer melt and de-wetting at high ED. An in-depth understanding of the impact of laser conditions on these stages is achieved, based on electrical data, Raman spectroscopy, optical microscopy, Scanning Electron Microscopy (SEM) and Scanning Transmission Electron Microscopy (STEM). Results reveal that both high pulse numbers and the use of a hot chuck enable to significantly reduce the ED needed to form low resistance contacts. In addition, sheet resistances and contact resistivities are linked to the microstructure evolution upon NLA exposure. As a proof-of-concept, an acceptable process point yields a contact resistivity around 5×10-5 Ω cm2 when the wafer is processed at 25 °C and a value as low as 10-5 Ω cm2 for 400 °C processing. The mechanisms involved and discussed in the present work may very likely pave the way for other contact formation with limited thermal budget.

A Method to Improve the Specific Contact Resistance of 4H-Sic Ohmic Contact Through Increasing the Ratio of Sp2-Carbon

A method to improve the specific contact resistance of 4H-SiC Ohmic contact through increasing the ratio of sp 2 -carbon

The Thermal Stability Study and Improvement of 4H-Sic Ohmic Contact

Optimization of Microstructure to Improve Si3n4 Ceramics with Thermal Conductivity and Mechanical Properties: Effect of Si and Α-Si3n4 Powder Composition

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The Ohmic Contact of 4H-Sic Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing

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Influence of the Absorption Layer on the Pulsed Laser (355 Nm) Annealing Thermal Budget During Formation of Ni-based Ohmic Contacts on 4H-Sic Substrate

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Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon