Abstract:Publication date: 22 August 2024 Source: Solid State Phenomena Vol. 359 Author(s): Mathieu Opprecht, Sébastien Kerdilès, Jérôme Biscarrat, Philippe Godignon, Cédric Masante, Romain Laviéville, Nicolas Vaxelaire, Patrice Gergaud, Adeline Grenier, Carl Jung, Fabien Roze, Zeinab Chehadi, Louis Thuries, Lu Lu, Toshiyuki Tabata Nowadays, the growing worldwide electrification requires new materials for power management. SiC currently dominates the market thanks to excellent energy efficiency and broad operating capabilities. The present paper proposes an experimental study of the Ni-SiC backside ohmic contact formation using 308 nm nanosecond laser annealing (NLA). After Nickel (80 nm) sputtering over 4H-SiC wafers, various laser conditions are investigated, with energy density (ED) ranging from 2.4 to 5.4 J/cm2, pulse number from 1 to 20 and chuck temperature from 25 °C (RT) to 400 °C. For all series, a common scenario is noticed as the ED increases, with first solid-state reactions, then local melt and, finally, complete top layer melt and de-wetting at high ED. An in-depth understanding of the impact of laser conditions on these stages is achieved, based on electrical data, Raman spectroscopy, optical microscopy, Scanning Electron Microscopy (SEM) and Scanning Transmission Electron Microscopy (STEM). Results reveal that both high pulse numbers and the use of a hot chuck enable to significantly reduce the ED needed to form low resistance contacts. In addition, sheet resistances and contact resistivities are linked to the microstructure evolution upon NLA exposure. As a proof-of-concept, an acceptable process point yields a contact resistivity around 5×10-5 Ω cm2 when the wafer is processed at 25 °C and a value as low as 10-5 Ω cm2 for 400 °C processing. The mechanisms involved and discussed in the present work may very likely pave the way for other contact formation with limited thermal budget.

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Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

The Ohmic Contact of 4H-Sic Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing

Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing

Influence of the Absorption Layer on the Pulsed Laser (355 Nm) Annealing Thermal Budget During Formation of Ni-based Ohmic Contacts on 4H-Sic Substrate

Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods

Numerical Simulation on Controlling the Front-Side Temperature of Thinned SiC Substrate During Ohmic Contact to Ni or Ti Using Back-Side Laser Annealing

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

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Effects of the Annealing Temperature on Ni Silicide/n-Si(100) Schottky Contacts

Molecular Dynamic Simulation of Non-Melt Laser Annealing Process

Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible Substrate

Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review

Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiC

Effect of laser annealing on amorphous silicon carbide films prepared by PECVD

Characterizations on the Doping of Single-Crystal Silicon Carbide

Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures

Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC

Annealing Influence on Stoichiometry and Band Alignment of 4H-SiC/SiO2 Interface Evaluated by X-ray Photoelectron Spectroscopy

Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing

Annealing Process Influence And Dopant-Silicide Interaction In Self-Aligned Nisi Technology