Abstract:Publication date: 31 July 2023 Source: Key Engineering Materials Vol. 950 Author(s): Nian Nian Ge, Cai Ping Wan, Zhi Jin, Heng Yu Xu Investigation of the reaction kinetics between Ni film and 4H-SiC substrate at temperatures which are usually used for ohmic contacts formation provides valuable insights into the studies on fundamental properties of ohmic contacts to 4H-SiC, which are limiting the switching speed, energy efficiency and high-temperature thermal stability of SiC MOSFETs. High Resolution Scanning Electron Microscope (HRSEM) and Raman spectroscopy were used to elaborately characterize the interfacial reaction products under various annealing conditions and to assess the thicknesses of reaction diffusion layers. The square of reaction layer thicknesses versus time followed parabolic law and the apparent active energy of interfacial reaction was derived as 1.5 eV (145 kJ/mol). For Raman spectra, the intensity ratio of two Raman peaks for each nickel silicide detected varied monotonically with temperature in the same trend, indicating that crystal quality of nickel silicide film was improved with annealing temperature rising at micron scale. The red-shift of Ni2Si peak locations at about 140 cm-1 with temperature was suggestive of the polycrystalline Ni2Si film with weaker stress/strain status. Moreover, the in-plane size of graphite cluster aggregating at top surface increased with annealing temperature rising until about 1000°C, which is detrimental to the ohmic contacts from the perspective of device applications.

Ohmic Contacts on P-Type Sic Using Al/C Films

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

Ohmic Contact Properties of Ni/C Film on 4H-Sic

Ohmic Contact Behavior of Carbon Films on SiC

Low Temperature Cu/Ti/Al Ohmic Contacts to P-Type 4H-Sic

Investigation of Ni/Al/Ti Ohmic Contact on N-Type 4H-Sic

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Searching for Device Processing Compatible Ohmic Contacts to Implanted P-Type 4H-Sic

Role of Interface Layers and Localized States in TiAl-Based Ohmic Contacts to p- Type 4H-SiC

Catalytic Graphitization and Ohmic Contact Formation on 4H–sic

Formation of ohmic contacts on heavily Al + -implanted p-type SiC without alloying process

Annealing Temperature Dependent Properties for Ni/Ti/W Ohmic Contacts Simultaneously Formed on N- and P-Type 4H-Sic

Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition

Electrical Contact Behavior of Ni/C60/4H–SiC Structures

Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods

Fabrication of Ohmic Contact on the Carbon-Terminated Surface of N-Type Silicon Carbide

Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC

Effect of Annealing on Ni Ohmic Contact of 3C -Sic

Ni Graphite Intercalated Compounds in Ohmic Contact Formation on SiC

Ohmic Contact and Interfacial Reaction of Ti/Al/Pt/Au Metallic Multi-Layers on N-Alxga1−xn/gan Heterostructures

Fabrication of Ti Ohmic Contact to N-Type 6H-Sic Without High-Temperature Annealing