Abstract:Publication date: 31 July 2023 Source: Key Engineering Materials Vol. 950 Author(s): Nian Nian Ge, Cai Ping Wan, Zhi Jin, Heng Yu Xu Investigation of the reaction kinetics between Ni film and 4H-SiC substrate at temperatures which are usually used for ohmic contacts formation provides valuable insights into the studies on fundamental properties of ohmic contacts to 4H-SiC, which are limiting the switching speed, energy efficiency and high-temperature thermal stability of SiC MOSFETs. High Resolution Scanning Electron Microscope (HRSEM) and Raman spectroscopy were used to elaborately characterize the interfacial reaction products under various annealing conditions and to assess the thicknesses of reaction diffusion layers. The square of reaction layer thicknesses versus time followed parabolic law and the apparent active energy of interfacial reaction was derived as 1.5 eV (145 kJ/mol). For Raman spectra, the intensity ratio of two Raman peaks for each nickel silicide detected varied monotonically with temperature in the same trend, indicating that crystal quality of nickel silicide film was improved with annealing temperature rising at micron scale. The red-shift of Ni2Si peak locations at about 140 cm-1 with temperature was suggestive of the polycrystalline Ni2Si film with weaker stress/strain status. Moreover, the in-plane size of graphite cluster aggregating at top surface increased with annealing temperature rising until about 1000°C, which is detrimental to the ohmic contacts from the perspective of device applications.

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Annealing Temperature Dependent Properties for Ni/Ti/W Ohmic Contacts Simultaneously Formed on N- and P-Type 4H-Sic

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Effects of the Annealing Temperature on Ni Silicide/n-Si(100) Schottky Contacts

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Interaction and ohmic contact between NiCr alloy and a-Si:H thin films at low temperatures

Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC

Ohmic Contact Properties of Ni/C Film on 4H-Sic

A Method to Improve the Specific Contact Resistance of 4H-Sic Ohmic Contact Through Increasing the Ratio of Sp2-Carbon

A method to improve the specific contact resistance of 4H-SiC Ohmic contact through increasing the ratio of sp 2 -carbon

Effect of graphite related interfacial microstructure created by high temperature annealing on the contact properties of Ni/Ti/6H-SiC

Low Temperature Cu/Ti/Al Ohmic Contacts to P-Type 4H-Sic

Investigation of Ni/Al/Ti Ohmic Contact on N-Type 4H-Sic

Effects of annealing temperature on the structure and electrical properties of tungsten contacts to n-type silicon carbide

The Thermal Stability Study and Improvement of 4H-Sic Ohmic Contact

Effect of the Deposition Sequence of Ti and W on the Ni-Based Ohmic Contacts to N-Type 4H-Sic

Electrical Contact Behavior of Ni/C60/4H–SiC Structures

Ohmic Contact Behavior of Carbon Films on SiC

Influence of the Absorption Layer on the Pulsed Laser (355 Nm) Annealing Thermal Budget During Formation of Ni-based Ohmic Contacts on 4H-Sic Substrate

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

Effect of Annealing Temperature on Ti/Al/Ni/Au Ohmic Contacts on Undoped AlN Films