Effect of Annealing on the Pyro-Phototronic Behaviour in Al/nanostructured PS-ML: p+-Si Schottky Photovoltaic Device

Jonmani Rabha,Mintu Das,Saponjeet Borah,Deepali Sarkar
DOI: https://doi.org/10.1007/s12633-024-03204-4
IF: 3.4
2024-12-07
Silicon
Abstract:In the present study, effect of annealing in Al/nanostructured porous silicon multilayer (PS-ML): p + -Si Schottky photovoltaic device is observed for the behavioural change in its pyro-phototronic and corresponding photovoltaic effect. Under UV (365 nm) illumination condition, the as-prepared device shows maximum enhancement and increment factor of 31.16% and 186% at compared to the devices annealed at temperatures and respectively. However, the coupling between pyro-phototronic and photovoltaic effect remains effective only for the device annealed up to . On further elevating the annealing temperature to , the pyro-phototronic effect diminishes while photovoltaic is still retained. The device treated at shows enhancement in open circuit voltage ( ) value of with large value of fill factor ( FF ) of and power conversion efficiency ( PCE ) of and for upward and downward poling respectively. While on elevating the annealing temperature to , device performance degrades.
materials science, multidisciplinary,chemistry, physical
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