Abstract:Carrier extraction and injection at Au/CNT heterojunctions significantly facilitate its transport and intensify the heating effect under infrared illumination leading to large temperature difference. Therefore, voltage generation based on photothermoelectric effect is significantly promoted with a voltage of 26.1 mV and power of 27.3 μW. An 8‐channel IR detector prototype demonstrates such a promising platform toward high‐performance optoelectronic applications. Carbon nanotubes (CNTs) have established their promising application as infrared photodetector and the photothermoelectric (PTE) effect is demonstrated to play a critical role. While extensive studies are focused on the optoelectronic behaviors, the thermoelectric conversion involved in the PTE has been pursued to less extent probably due to the overall low thermopower under infrared (IR) illumination. Herein, to trigger a stronger PTE response, Au/CNT heterojunctions are formed by Au nanoparticles (NPs) decoration of CNT films to facilitate both light absorption and carrier transportation, so that thermoelectric property is enhanced simultaneously. Significant boost on infrared radiation energy conversion capability is therefore enabled in Au NPs decorated CNT film, delivering maximum output voltage of 26.1 mV and power of 27.3 μW, outperforming the state‐of‐the art photodetectors based on PTE effect. The transport mechanism is revealed via combining in situ Kelvin Probe Force Microscope mapping of the surface potential and macroscopic transport and output performances under IR illumination. Finally, the IR detection function is validated via an 8‐channel IR detector prototype, presenting sensitive responsivity and long‐term cyclic stability. The study thus demonstrates the PTE effect as a promising platform toward high‐performance optoelectronic applications such as IR detection and solar energy harvesting.

Enhanced Photo-Thermoelectric Detection in Black Silicon with Chimney-Like Texture

Photo-Thermoelectric Conversion Using Black Silicon with Enhanced Light Trapping Performance far beyond the Band Edge Absorption

A plasmon modulated photothermoelectric photodetector in silicon nanostripes

Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation

High-dielectric loss black silicon decorated with multi-nanostructure for wide-band mid-infrared absorption

Black silicon for near-infrared and ultraviolet photodetection: A review

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Sensitive Terahertz Detection and Imaging Driven by the Photothermoelectric Effect in Ultrashort-Channel Black Phosphorus Devices

Black Silicon with Order-Disordered Structures for Enhanced Light Trapping and Photothermic Conversion

Broadband-Spectral-Responsivity of black silicon photodetector with high gain and sub-bandgap sensitivity by titanium hyperdoping

System design of large-area vertical photothermoelectric detectors based on carbon nanotube forests with MXene electrodes

Broadband MSM photodetector based on S-doped black silicon fabricated by femtosecond laser

Significantly Boosted Photothermoelectric Effect via Carrier Injection in Au Decorated SWCNT Films for Infrared Detection

Enhanced photothermoelectric conversion in self-rolled tellurium photodetector with geometry-induced energy localization

Direct fabrication of black Si with enhanced infrared transmittance using femtosecond laser irradiation

High-Performance Ultrabroadband Photodetector Based on Photothermoelectric Effect.

Terahertz Photon Detection: Sensitive Terahertz Detection and Imaging Driven by the Photothermoelectric Effect in Ultrashort‐Channel Black Phosphorus Devices (adv. Sci. 5/2020)

Broadband optical absorption copper surface fabricated by femtosecond laser for sensitivity enhancement of thermoelectric photodetector

Thermal Localization Enhanced Fast Photothermoelectric Response in a Quasi-one-dimensional Flexible NbS3 Photodetector.

Room‐Temperature Blackbody‐Sensitive Photodetector with Visible‐To‐Long‐Wavelength‐Infrared Photoresponse and Ultrafast Speed Based on a Te/PtSe2 Heterostructure

Progress of Photodetectors Based on the Photothermoelectric Effect