Abstract:The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier saturation velocity and larger breakdown voltage, enabling a high intrinsic time resolution and mitigating pile-up effects. Additionally, as radiation hardness requirements grow more demanding, wide-bandgap materials such as 4H-SiC could offer better performance. In this work, the detector performance of 50 micron thick 4H-SiC p-in-n planar pad sensors was investigated at room temperature, using an 241Am alpha source at reverse biases of up to 1100 V. Samples subjected to neutron irradiation with fluences of up to 1e16/cm^2 were included in the study in order to quantify the radiation hardness properties of 4H-SiC. The obtained results are compared to previously performed UV-TCT studies. Samples exhibit a drop in charge collection efficiency (CCE) with increasing irradiation fluence, partially compensated at high reverse bias voltages far above full depletion voltage. A plateau of the collected charges is observed in accordance with the depletion of the volume the alpha particles penetrate for an unirradiated reference detector. For the neutron-irradiated samples, such a plateau only becomes apparent at higher reverse bias. For the highest investigated fluence, CCE behaves almost linearly with increasing reverse bias. Compared to UV-TCT measurements, the reverse bias required to deplete a sensitive volume covering full energy deposition is lower, due to the small penetration depth of the alpha particles. At the highest reverse bias, the measured CCE values agree well with earlier UV-TCT studies, with discrepancies between 1% and 5%.

Time Resolution of the 4H-SiC PIN Detector

Design Realization and Characterization of A Position Sensitive Detector for Fast Optical Measurement

Design and simulation of a novel 4H-SiC LGAD timing device

Timing Performance Simulation for 3D 4H-SiC Detector

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

Detection resolving power of SiC Timepix3 detector to electrons, neutrons, ions and protons

Fabrication of Si Radiation Detector with Plane Technology

Research on the structure of ultrathin Si PIN detector

Transient Behaviour Analysis in Silicon Carbide Alpha Particle Detector Using TCAD and SRIM Simulation

Over 98% Linearity 4H-Sic Ultraviolet Position Sensitive Detector

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm²

Temporal Resolution Research Based On X-Ray Superconducting Nanowire Single-Photon Detectors

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation

Development of P-I-n Radiation Detectors Based on Semi-Insulating 4H-Sic Substrate Via Dual-Face Ion Implantation

Superconducting nanowire single photon detector on 4H-SiC substrates with saturated quantum efficiency

NbN Superconducting Nanowire Single-Photon Detector With 90.5% Saturated System Detection Efficiency and 14.7 ps System Jitter at 1550 nm Wavelength

The fast neutron response of 4H silicon carbide semiconductor radiation detectors

Demonstration of sub-3 ps temporal resolution with a superconducting nanowire single-photon detector

Front-end electronics development of large-area SiPM arrays for high-precision single-photon time measurement

Study of time resolution by digital methods with DRS4 system

Fabrication and characterization of ultra-thin PIN detector