Abstract:In the last two decades we have assisted to a rush towards finding a 3He-replacing technology capable of detecting neutrons emitted from fissile isotopes. The demand stems from applications like nuclear war-head screening or preventing illicit traffic of radiological materials. Semiconductor detectors stand among the strongest contenders, particularly those based on materials possessing a wide band gap like silicon carbide (SiC). We review the workings of SiC-based neutron detectors, along with several issues related to material properties, device fabrication and testing. The paper summarizes the experimental and theoretical work carried out within the E-SiCure project (Engineering Silicon Carbide for Border and Port Security), co-funded by the NATO Science for Peace and Security Programme. The main goal was the development of technologies to support the fabrication of radiation-hard silicon carbide detectors of special nuclear materials. Among the achievements, we have the development of successful Schottky barrier based detectors and the identification of the main carrier life-time-limiting defects in the SiC active areas, either already present in pristine devices or introduced upon exposure to radiation fields. The physical processes involved in neutron detection are described. Material properties as well as issues related to epitaxial growth and device fabrication are addressed. The presence of defects in as-grown material, as well as those introduced by ionizing radiation are reported. We finally describe several experiments carried out at the Jozef Stefan Institute TRIGA Mark II reactor (Ljubljana, Slovenia), where a set of SiC-based neutron detectors were tested, some of which being equipped with a thermal neutron converter layer. We show that despite the existence of large room for improvement, Schottky barrier diodes based on state-of-the-art 4 H -SiC are closing the gap between gas- and semiconductor-based detectors regarding their sensitivity.

The fast neutron response of 4H silicon carbide semiconductor radiation detectors

A Review of the Effects of Fast-Neutron Irradiation on the Performance of 4H-SiC Schottky Barrier Detectors

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation

Performance of a 4H-Sic Schottky Diode As a Compact Sized Detector for Neutron Pulse Form Measurements

Thermal neutron response of neutron detector based on SiC

Study on 4H-SiC Schottky Diode Alpha-particle Detector

Development of a silicon carbide radiation detection system and experimentation of the system performance

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

Fabrication and characterization of high-resolution 4H-SiC epitaxial radiation detectors for challenging reactor dosimetry environments

High-resolution Alpha-Particle Spectrometry Based on 4H Silicon Carbide Semiconductor Detectors

Silicon carbide diodes for neutron detection

Electrical and Spectroscopic Properties of SiC Detectors

Feasibility study of a SiC sandwich neutron spectrometer

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

Characterisation of SiC radiation detector technologies with synchrotron X-rays

A self-biased neutron detector based on an SiC semiconductor for a harsh environment

Detection resolving power of SiC Timepix3 detector to electrons, neutrons, ions and protons

Neutron Radiation induced Effects in 4H-SiC PiN Diodes

Dosimetry Methods of Fast Neutron Using the Semiconductor Diodes

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

Development of the Large Sensitive Area 4H-Sic Schottky Detectors at the Back-n