Abstract:In the last two decades we have assisted to a rush towards finding a 3He-replacing technology capable of detecting neutrons emitted from fissile isotopes. The demand stems from applications like nuclear war-head screening or preventing illicit traffic of radiological materials. Semiconductor detectors stand among the strongest contenders, particularly those based on materials possessing a wide band gap like silicon carbide (SiC). We review the workings of SiC-based neutron detectors, along with several issues related to material properties, device fabrication and testing. The paper summarizes the experimental and theoretical work carried out within the E-SiCure project (Engineering Silicon Carbide for Border and Port Security), co-funded by the NATO Science for Peace and Security Programme. The main goal was the development of technologies to support the fabrication of radiation-hard silicon carbide detectors of special nuclear materials. Among the achievements, we have the development of successful Schottky barrier based detectors and the identification of the main carrier life-time-limiting defects in the SiC active areas, either already present in pristine devices or introduced upon exposure to radiation fields. The physical processes involved in neutron detection are described. Material properties as well as issues related to epitaxial growth and device fabrication are addressed. The presence of defects in as-grown material, as well as those introduced by ionizing radiation are reported. We finally describe several experiments carried out at the Jozef Stefan Institute TRIGA Mark II reactor (Ljubljana, Slovenia), where a set of SiC-based neutron detectors were tested, some of which being equipped with a thermal neutron converter layer. We show that despite the existence of large room for improvement, Schottky barrier diodes based on state-of-the-art 4 H -SiC are closing the gap between gas- and semiconductor-based detectors regarding their sensitivity.

Modelling of a SiC Based Detector for the Interpretation of 14.1 MeV Neutrons Measurements

3-D thermal and radiation-matter interaction simulations of a SiC solid-state detector for neutron flux measurements in JSI TRIGA Mark II research reactor

Silicon carbide diodes for neutron detection

Monte Carlo Analysis of Silicon Carbide Neutron Detector With Double Conversion Layer

Modelling Gd-diamond and Gd-SiC neutron detectors

Theoretical analysis of neutron spectra measurement with SiC detectors using a machine learning technique

The fast neutron response of 4H silicon carbide semiconductor radiation detectors

Thermal neutron response of neutron detector based on SiC

Detection resolving power of SiC Timepix3 detector to electrons, neutrons, ions and protons

Development of a silicon carbide radiation detection system and experimentation of the system performance

A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure

4H-Silicon Carbide as particle detector for high-intensity ion beams

Modelling Neutron Interactions in the Imaging See Monitor

Simulation of signal formation and imaging in a dual-sided micro-structured semiconductor neutron detector

Performance of a 4H-Sic Schottky Diode As a Compact Sized Detector for Neutron Pulse Form Measurements

Measurement of the $^{14}$C spectrum with Silicon Drift Detectors: towards the study of forbidden $β$ transitions

Thermal neutron detection based on resistive gaseous devices

Particle discrimination in a NaI crystal using the COSINUS remote TES design

Design and Initial Tests of a Fast Neutron Radiography Detector Prototype with Silicon Photomultiplier Readouts

Modelling the Response of CLLBC(Ce) and TLYC(Ce) SiPM-Based Radiation Detectors in Mixed Radiation Fields with Geant4

Front-End Design for SiPM-Based Monolithic Neutron Double Scatter Imagers