Simulation of signal formation and imaging in a dual-sided micro-structured semiconductor neutron detector

Sanchit Sharma,Diego Laramore,Steven Bellinger,Walter J. McNeil,Amir A. Bahadori
DOI: https://doi.org/10.1109/nss/mic42101.2019.9059683
2019-10-01
Abstract:Dual-sided micro-structured neutron detectors have the benefit of doubling neutron detection efficiency as compared to single-sided devices, by staggering 6LiF-filled trenches between the top and bottom surface of a silicon diode. This produced a more complex electric field distribution and depletion characteristics in the diode and created an indirect path for signal carrier transport between device electrodes. Signal formation in this system was simulated with COMSOL Multiphysics for semiconductor physics, Geant4 for radiation transport and interaction modeling, and Allpix2 for mobile charge carrier transport and total charge collection. The results of this simulation work provided an estimate of charge cluster shape and intensity for a pixel array configuration corresponding to Timepix3 readout system. In addition, imaging performance for transmission radiography was demonstrated with a simple two-dimensional shape in a Gaussian beam of thermal neutrons. The simulated neutron detection efficiency was 57.6%.
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