Abstract:In the last two decades we have assisted to a rush towards finding a 3He-replacing technology capable of detecting neutrons emitted from fissile isotopes. The demand stems from applications like nuclear war-head screening or preventing illicit traffic of radiological materials. Semiconductor detectors stand among the strongest contenders, particularly those based on materials possessing a wide band gap like silicon carbide (SiC). We review the workings of SiC-based neutron detectors, along with several issues related to material properties, device fabrication and testing. The paper summarizes the experimental and theoretical work carried out within the E-SiCure project (Engineering Silicon Carbide for Border and Port Security), co-funded by the NATO Science for Peace and Security Programme. The main goal was the development of technologies to support the fabrication of radiation-hard silicon carbide detectors of special nuclear materials. Among the achievements, we have the development of successful Schottky barrier based detectors and the identification of the main carrier life-time-limiting defects in the SiC active areas, either already present in pristine devices or introduced upon exposure to radiation fields. The physical processes involved in neutron detection are described. Material properties as well as issues related to epitaxial growth and device fabrication are addressed. The presence of defects in as-grown material, as well as those introduced by ionizing radiation are reported. We finally describe several experiments carried out at the Jozef Stefan Institute TRIGA Mark II reactor (Ljubljana, Slovenia), where a set of SiC-based neutron detectors were tested, some of which being equipped with a thermal neutron converter layer. We show that despite the existence of large room for improvement, Schottky barrier diodes based on state-of-the-art 4 H -SiC are closing the gap between gas- and semiconductor-based detectors regarding their sensitivity.

Research Progress in Silicon Carbide Neutron Detector

Silicon carbide diodes for neutron detection

Development of a silicon carbide radiation detection system and experimentation of the system performance

Monte Carlo Analysis of Silicon Carbide Neutron Detector With Double Conversion Layer

SiC detectors: A review on the use of silicon carbide as radiation detection material

A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure

Latest developments in room-temperature semiconductor neutron detectors: Prospects and challenges

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

Detection resolving power of SiC Timepix3 detector to electrons, neutrons, ions and protons

A self-biased neutron detector based on an SiC semiconductor for a harsh environment

3-D thermal and radiation-matter interaction simulations of a SiC solid-state detector for neutron flux measurements in JSI TRIGA Mark II research reactor

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Fabrication and characterization of high-resolution 4H-SiC epitaxial radiation detectors for challenging reactor dosimetry environments

Electrical and Spectroscopic Properties of SiC Detectors

Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4

Characterisation of SiC radiation detector technologies with synchrotron X-rays

Position-resolved charge collection of silicon carbide detectors with an epitaxially-grown graphene layer

Research on the Technological Progress of CZT Array Detectors

Investigation of the Performance Degradation of 4H-SiC Neutron Detectors Using MCNP and TCAD

Radiation hardness of self-powered Si/SiC heterojunction detector under neutron irradiation

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation