Abstract:Traditional semiconductor detectors such as silicon and germanium are easily affected by ambient temperature and charge-particle ion's radiation. They can't work stably in harsh environments such as high temperature and strong radiation for a long time. In this paper, 4H-silicon carbide detectors based on a Schottky barrier diode (SBD) were fabricated and the combined influences of high temperatures and heavy ion irradiation on 4H–SiC detectors have been investigated. With no radiation, the 4H–SiC detectors have excellent I–V characteristics performance during a temperature range of 30–200 °C. Even at an ambient temperature of 200 °C, the leakage current of the 4H–SiC detector was only 107 nA at the full depletion voltage. Then 280 KeV C 4+ heavy ions were used to irradiate the 4H-silicon carbide detectors, and the performances of the irradiated detectors were studied for different radiation doses from 1×10 13 to 1×10 16 ions/cm 2 in a certain higher ambient temperature environment. For the fully depleted 4H-silicon carbide detectors in an ambient temperature of 140 °C, both the I–V characteristics and the energy resolution have shown a certain radiation damage at the radiation fluence of 1×10 15 ions/cm 2 , while a significant deterioration was observed when the radiation fluence is up to 1×10 16 ions/cm 2 . It means that the 4H–SiC detectors can withstand an irradiation dose of 1×10 15 ions/cm 2 at 140 °C. The time-dependent I–V curves were also investigated for the irradiated detectors for a standing time up to 192 hours, and it's found that the irradiated detectors had minor changes in the leakage currents during a long time standing. A PN junction model with current and voltage equations was used to explain the phenomenon that the reverse leakage current increases with the increase of temperature. The surface recombination model was also used to explain the deterioration of I–V characteristics and energy resolution after irradiation.

Radiation hardness of self-powered Si/SiC heterojunction detector under neutron irradiation

A self-biased neutron detector based on an SiC semiconductor for a harsh environment

Development of a silicon carbide radiation detection system and experimentation of the system performance

Neutron irradiation and polarization effect of 4H-SiC Schottky detector

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation

A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure

Investigation of the Performance Degradation of 4H-SiC Neutron Detectors Using MCNP and TCAD

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

Neutron Radiation induced Effects in 4H-SiC PiN Diodes

Observation of Charge Enhancement in forward-biased neutron-irradiated 4H-SiC PiN Detectors in UV-TCT Measurements

Influence of heavy ion irradiation and high temperature on the performance of 4H–SiC Schottky barrier α particle detector

A Review of the Effects of Fast-Neutron Irradiation on the Performance of 4H-SiC Schottky Barrier Detectors

Radiation Hardness tests with neutron flux on different Silicon photomultiplier devices

Monte Carlo Analysis of Silicon Carbide Neutron Detector With Double Conversion Layer

Effect of Very High-Fluence Proton Radiation on 6H-Sic Photoconductive Proton Detectors

Characterisation of SiC radiation detector technologies with synchrotron X-rays

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

Silicon carbide diodes for neutron detection

Detection resolving power of SiC Timepix3 detector to electrons, neutrons, ions and protons

3-D thermal and radiation-matter interaction simulations of a SiC solid-state detector for neutron flux measurements in JSI TRIGA Mark II research reactor

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate