Abstract:Due to the excellent electrical and optical properties and their integration capability without lattice matching requirements, low-dimensional materials have received increasing attention in silicon photonic circuits. Bi2O2Se with high carrier mobility, narrow bandgap, and good air stability is very promising for high-performance near-infrared photodetectors. Here, the chemical vapor deposition method is applied to grow Bi2O2Se onto mica, and our developed polycarbonate/polydimethylsiloxane-assisted transfer method enables the clean and intact transfer of Bi2O2Se on top of a silicon waveguide. We demonstrated the Bi2O2Se/Si waveguide integrated photodetector with a small dark current of 72.9 nA, high responsivity of 3.5 A·W-1, fast rise/decay times of 22/78 ns, and low noise-equivalent power of 15.1 pW·Hz-0.5 at an applied voltage of 2 V in the O-band for transverse electric modes. Additionally, a microring resonator is designed for enhancing light-matter interaction, resulting in a wavelength-sensitive photodetector with reduced dark current (15.3 nA at 2 V) and more than a 3-fold enhancement in responsivity at the resonance wavelength, which is suitable for spectrally resolved applications. These results promote the integration of Bi2O2Se with a silicon photonic platform and are expected to accelerate the future use of integrated photodetectors in spectroscopy, sensing, and communication applications.

Investigation of Evanescent Coupling Between SOI Waveguides and Heterogeneously-Integrated III–V Pin Photodetectors

Design and Analysis of Ingaas Pin Photodetectors Integrated on Silicon-On-Insulator Racetrack Resonators

InGaAs PIN Photodetectors Integrated on Silicon-on-insulator Waveguides

Optical Investigations of Directly Wafer-Bonded InP–GaAs Heterojunctions

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Hybrid Integrated Velocity Matched Travelling-Wave InP/InGaAs Photodetectors with Silicon Nitride Waveguides

Design and Optimization of InAs Waveguide-Integrated Photodetectors on Silicon Via Heteroepitaxial Integration for Mid-Infrared Silicon Photonics

Si-Cmos Compatible Materials and Devices for Mid-Ir Microphotonics

Integration of High-Performance InGaAs/GaN Photodetectors by Direct Bonding Via Micro-transfer Printing.

Novel Photodetectors and Image Sensors Based on SOI Substrate

InP/InGaAs Photodetector on SOI Photonic Circuitry

Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding

Monolithic integration of embedded III-V lasers on SOI

Photodetectors integrating waveguides and semiconductor materials

Recent progress of III–V quantum dot infrared photodetectors on silicon

InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer

High-Performance Waveguide-Integrated Bi 2 O 2 Se Photodetector for Si Photonic Integrated Circuits

High-speed III-V nanowire photodetector monolithically integrated on Si

Ultra-Compact Coupling Structures for Heterogeneously Integrated Silicon Lasers

Ultracompact Adiabatic Tapered Coupler For The Si/Iii-V Heterogeneous Integration