Abstract:In this paper, the performance of SiC-based neutron detector was investigated using GEANT4 toolkit. Thin-film-coated and trench type neutron detectors were considered and their intrinsic detection efficiency were calculated according to the relevant structural parameters, with Low-Level Discriminator (LLD) value fixed at 300 keV. For thin-film-coated detector, the analysis carried out for varied layer thicknesses of 10B and 6LiF showed that the intrinsic detection efficiency increases with the increase of thickness, and reaches the maximum value at the critical thickness and thereafter found to gradually decrease. Due to the self-absorption effect of the conversion material, the intrinsic detection efficiency of the thin-film-coated SiC neutron detector is limited to less than 5%. Fortunately, the trench type SiC neutron detector can break through this limitation. However, under current process conditions, SiC can only be used for shallow trench etching. In order to increase the neutron detection efficiency as high as possible in the limited trench depth, we have proposed a scheme of filling the trench with a double conversion layer, which can significantly improve the intrinsic detection efficiency of neutrons compared with the traditional trench structure with a single conversion layer. Apart from estimating the intrinsic detection efficiency, the energy deposition spectrum in the SiC detector region by the produced secondary charged particles upon thermal neutron interaction with conversion material(10B and 6LiF) have also been researched for various structural parameters such as conversion layer thickness, trench width and trench gap of detector.

Thickness Determination of Silicon Detector and Calibration of CsI(Tl)

Investigation of the Thickness Non-Uniformity of the Very Thin Silicon-Strip Detectors

Nuclear Counter Effect of Silicon Photodiode Used in Csi(Tl) Crystal Calorimeter

Measurement of intrinsic radioactive backgrounds from Cs-137 and U/Th chains in CsI(Tl) crystals

Fabrication and Characterization of Thin Silicon PIN Detectors

Monte Carlo Analysis of Silicon Carbide Neutron Detector With Double Conversion Layer

Thickness Estimation of the Si Thin Films: a Simulation Study

On Determining Dead Layer and Detector Thicknesses for a Position-Sensitive Silicon Detector

Two annular CsI(Tl) detector arrays for the charged particle telescopes

Property Investigation for Different Wedge-Shaped CsI(Tl)s

Thermal neutron response of neutron detector based on SiC

Development of Si Multi-Strip Detector

High-energy electron measurements with thin Si detectors

Development of a Light Yield Calibration Method for Μsr Detectors Based on Compton Edge Location

Fabrication Of Ultra-Thin Silicon Pin Detector

Monte Carlo Simulation of CsI(Tl) Scintillator Detector with GEANT4 ToolKit

Energy Calibration of CsI(Tl) Crystal for Quenching Factor Measurement in Dark Matter Search

Measurement of Intrinsic Radioactive Backgrounds from the 137 Cs and U/Th Chains in CsI(Tl) Crystals

Studies of 100 um-thick silicon strip detector with analog VLSI readout

Theoretical design of a solid scintillation detector for tritium surface contamination measurement based on CaF 2 (Eu) sheet and self-coincidence technology of MCP-PMT

Measurement of Quenching Factor for Nuclear Recoils in CsI(Tl) Crystal