Abstract:Silicon carbide (SiC) devices have shown substantial promise in realizing ultrahigh-voltage and high power, and have been usually considered as a potential candidate for high radiation levels applications. However, in this work it is found that the SiC P-intrinsic-N (PiN) diodes are sensitive to the electron irradiation, which exerts significant influence on the device characteristics. The physical mechanisms behind these behaviors are studied by probing the production of point defects and the evolution of carrier lifetime in the SiC epilayers after irradiation. It is found that the forward current is significantly reduced by irradiation and the specific on-resistance monotonously increases with the increasing electron fluences, which is resulted from the deteriorated conductivity modulation effects in the epilayer due to the enhanced carrier recombination from the radiation induced deep-level defects, such as the carbon vacancy (VC), silicon vacancy (VSi) and VC+VSi complexes. Inversely, no significant change is observed in the reverse leakage current of 4H-SiC PiN diodes, and the breakdown voltage even slightly increases after electron irradiation, which are ascribed to the suppressed carrier generation arising from the point defects in 4H-SiC with a wide bandgap and the carrier-removal effects caused by the acceptor like point defects generated during irradiation, respectively.

Study on Geometry of Silicon PIN Radiation Detector for Breakdown Voltage Improvement

A research on thick PIN detector with high breakdown voltage

Study on Small Dead Area High-Voltage Silicon Pin Detectors

Simulation of Silicon Surface Barrier Detector with PN Junction Guard Rings to Improve the Breakdown Voltage

Breakdown Performance of Guard Ring Designs for Pixel Detectors in $150~\mathrm{nm}$ CMOS Technology

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Fabrication and Characterization of Thin Silicon PIN Detectors

Research on the structure of ultrathin Si PIN detector

Research on silicon PIN neutron dose detector

Fabrication of 1.5mm Thickness Silicon Pin Fast Neutron Detector with Guard Ring Structure

Simulation of reverse breakdown in planar P-N junctions

Test Analysis of Ion-Implanted PIN Radiation Detectors

Electron Radiation Effects on the 4H-Sic PiN Diodes Characteristics: an Insight from Point Defects to Electrical Degradation

Optimal Design of Multiple Floating Rings for 3D Large-Area Trench Electrode Silicon Detector

Simulation of Radiation Damage for Silicon Drift Detector

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

Development of Large Area Silicon Semiconductor Detectors for Use in the Current Mode

New Pin Diode Structure for Neutron Dose Measurement

Fabrication of Si Radiation Detector with Plane Technology

The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

Effects of Electrode Area and Interval on the Sensitivity of Bilateral Silicon Detectors Used for Neutron Dosimetry