Abstract:Silicon carbide (SiC) devices have shown substantial promise in realizing ultrahigh-voltage and high power, and have been usually considered as a potential candidate for high radiation levels applications. However, in this work it is found that the SiC P-intrinsic-N (PiN) diodes are sensitive to the electron irradiation, which exerts significant influence on the device characteristics. The physical mechanisms behind these behaviors are studied by probing the production of point defects and the evolution of carrier lifetime in the SiC epilayers after irradiation. It is found that the forward current is significantly reduced by irradiation and the specific on-resistance monotonously increases with the increasing electron fluences, which is resulted from the deteriorated conductivity modulation effects in the epilayer due to the enhanced carrier recombination from the radiation induced deep-level defects, such as the carbon vacancy (VC), silicon vacancy (VSi) and VC+VSi complexes. Inversely, no significant change is observed in the reverse leakage current of 4H-SiC PiN diodes, and the breakdown voltage even slightly increases after electron irradiation, which are ascribed to the suppressed carrier generation arising from the point defects in 4H-SiC with a wide bandgap and the carrier-removal effects caused by the acceptor like point defects generated during irradiation, respectively.

Study on Small Dead Area High-Voltage Silicon Pin Detectors

A research on thick PIN detector with high breakdown voltage

Study on Geometry of Silicon PIN Radiation Detector for Breakdown Voltage Improvement

Research Of Designing For The High Voltage Device In Cmos Hv-Ic

Detection of Nanopores with the Scanning Ion Conductance Microscopy: A Simulation Study

Fabrication and Characterization of Thin Silicon PIN Detectors

Research on the structure of ultrathin Si PIN detector

An Effective High-Voltage Termination for Sic Planar Pn Junctions for Use in High-Voltage Devices and Uv Detectors

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model

Electron Radiation Effects on the 4H-Sic PiN Diodes Characteristics: an Insight from Point Defects to Electrical Degradation

Simulation of Silicon Surface Barrier Detector with PN Junction Guard Rings to Improve the Breakdown Voltage

Research on silicon PIN neutron dose detector

Development of Large Area Silicon Semiconductor Detectors for Use in the Current Mode

EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes

Experimental Study on Electrical Breakdown of Micro-Electro-Mechanical Systems with Micro-Gaps

Test Analysis of Ion-Implanted PIN Radiation Detectors

Study on Electrical Inspection's Dead Zone of Capacitive Detector

Study of point defect detectors in Si

TCAD Analysis of Leakage Current and Breakdown Voltage in Small Pitch 3D Pixel Sensors

Numerical Simulation of Gas Breakdown in Microgaps Based on PIC/MCC Method

TCAD simulations of silicon strip and pixel sensor optimization